Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

doi:10.1088/1674-1056/25/11/117803

中国物理B ›› 2016, Vol. 25 ›› Issue (11): 117803-117803.doi: 10.1088/1674-1056/25/11/117803

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Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

收稿日期:2016-08-16 修回日期:2016-09-28 出版日期:2016-11-05 发布日期:2016-11-05
通讯作者: Hong Chen E-mail:hchen@iphy.ac.cn
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340) and the Innovative Clean-energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

Key Laboratory for Renewable Energy, Beijing Key Laboratory for New Energy Materials and Devices, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China

Received:2016-08-16 Revised:2016-09-28 Online:2016-11-05 Published:2016-11-05
Contact: Hong Chen E-mail:hchen@iphy.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340) and the Innovative Clean-energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

摘要/Abstract

摘要：

A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported. According to the well established light-to-electricity conversion theory, quantum wells (QWs) cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually relax to ground energy levels, owing to quantum confinement, and cannot form a photocurrent. We observe directly that more than 95% of the photoexcited carriers escape from InGaN/GaN QWs to generate a photocurrent, indicating that the thermionic emission and tunneling processes proposed previously cannot explain carriers escaping from QWs. We show that photoexcited carriers can escape directly from the QWs when the device is under working conditions. Our finding challenges the current theory and demonstrates a new prospect for developing highly efficient solar cells and photodetectors.

关键词: p-n junction, carrier transportation, quantum wells, light-to-electricity conversion

Abstract:

Key words: p-n junction, carrier transportation, quantum wells, light-to-electricity conversion

中图分类号: (Quantum wires)

78.67.Lt

吴海燕, 马紫光, 江洋, 王禄, 杨浩军, 李阳锋, 左朋, 贾海强, 王文新, 周钧铭, 刘伍明, 陈弘. Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction[J]. 中国物理B, 2016, 25(11): 117803-117803.

Haiyan Wu(吴海燕), Ziguang Ma(马紫光), Yang Jiang(江洋), Lu Wang(王禄), Haojun Yang(杨浩军), Yangfeng Li(李阳锋), Peng Zuo(左朋), Haiqiang Jia(贾海强), Wenxin Wang(王文新), Junming Zhou(周钧铭), Wuming Liu(刘伍明), Hong Chen(陈弘). Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction[J]. Chin. Phys. B, 2016, 25(11): 117803-117803.

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Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

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