中国物理B ›› 2016, Vol. 25 ›› Issue (8): 87801-087801.doi: 10.1088/1674-1056/25/8/087801

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells

Ya-Li Liu(刘雅丽), Peng Jin(金鹏), Gui-Peng Liu(刘贵鹏), Wei-Ying Wang(王维颖), Zhi-Qiang Qi(齐志强), Chang-Qing Chen(陈长清), Zhan-Guo Wang(王占国)   

  1. 1 Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
    3 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
  • 收稿日期:2016-03-08 修回日期:2016-04-10 出版日期:2016-08-05 发布日期:2016-08-05
  • 通讯作者: Peng Jin E-mail:pengjin@semi.ac.cn
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant No. 2012CB619306), the Beijing Science and Technology Project, China (Grant No. Z151100003315024), and the National Natural Science Foundation of China (Grant No. 61404132).

Exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells

Ya-Li Liu(刘雅丽)1, Peng Jin(金鹏)1, Gui-Peng Liu(刘贵鹏)1, Wei-Ying Wang(王维颖)2, Zhi-Qiang Qi(齐志强)3, Chang-Qing Chen(陈长清)3, Zhan-Guo Wang(王占国)1   

  1. 1 Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871, China;
    3 Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
  • Received:2016-03-08 Revised:2016-04-10 Online:2016-08-05 Published:2016-08-05
  • Contact: Peng Jin E-mail:pengjin@semi.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant No. 2012CB619306), the Beijing Science and Technology Project, China (Grant No. Z151100003315024), and the National Natural Science Foundation of China (Grant No. 61404132).

RichHTML

0

PDF (PC)

392

赞

摘要： The exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells (MQWs) is studied by deep-ultraviolet time-integrated and time-resolved photoluminescence (PL). Up to four longitudinal-optical (LO) phonon replicas of exciton recombination are observed, indicating the strong coupling of excitons with LO phonons in the MQWs. Moreover, the exciton-phonon coupling strength in the MQWs is quantified by the Huang-Rhys factor, and it keeps almost constant in a temperature range from 10 K to 120 K. This result can be explained in terms of effects of fluctuations in the well thickness in the MQWs and the temperature on the exciton-phonon interaction.

关键词: exciton-phonon coupling, AlGaN quantum wells, deep-ultraviolet photoluminescence

Abstract: The exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells (MQWs) is studied by deep-ultraviolet time-integrated and time-resolved photoluminescence (PL). Up to four longitudinal-optical (LO) phonon replicas of exciton recombination are observed, indicating the strong coupling of excitons with LO phonons in the MQWs. Moreover, the exciton-phonon coupling strength in the MQWs is quantified by the Huang-Rhys factor, and it keeps almost constant in a temperature range from 10 K to 120 K. This result can be explained in terms of effects of fluctuations in the well thickness in the MQWs and the temperature on the exciton-phonon interaction.

Key words: exciton-phonon coupling, AlGaN quantum wells, deep-ultraviolet photoluminescence

中图分类号:  (Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures)

  • 78.67.-n
78.66.Fd (III-V semiconductors) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)