中国物理B ›› 2018, Vol. 27 ›› Issue (8): 87303-087303.doi: 10.1088/1674-1056/27/8/087303

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Optoelectronic properties of bottom gate-defined in-plane monolayer WSe2 p-n junction

Di Liu(刘頔), Xiao-Zhuo Qi(祁晓卓), Kuei-Lin Chiu(邱奎霖), Takashi Taniguchi, Xi-Feng Ren(任希锋), Guo-Ping Guo(郭国平)   

  1. 1 Key Laboratory of Quantum Information, University of Science and Technology of China, Chinese Academy of Sciences, Hefei 230026, China;
    2 Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
    3 National Institute for Materials Science, Namiki 1-1, Ibaraki 305-0044, Japan
  • 收稿日期:2018-03-10 修回日期:2018-05-11 出版日期:2018-08-05 发布日期:2018-08-05
  • 通讯作者: Xi-Feng Ren, Guo-Ping Guo E-mail:renxf@ustc.edu.cn;gpguo@ustc.edu.cn
  • 基金资助:

    Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0301700), the National Natural Science Foundation of China (Grant Nos. 61590932, 11774333, 61674132, 11674300, 11575172, and 11625419), the Anhui Provincial Initiative in Quantum Information Technologies, China (Grant Nos. AHY080000 and AHY130300), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB24030601), and the Fundamental Research Funds for the Central Universities, China. This work was partially carried out at the USTC Center for Micro and Nanoscale Research and Fabrication.

Optoelectronic properties of bottom gate-defined in-plane monolayer WSe2 p-n junction

Di Liu(刘頔)1,2, Xiao-Zhuo Qi(祁晓卓)1,2, Kuei-Lin Chiu(邱奎霖)1,2, Takashi Taniguchi3, Xi-Feng Ren(任希锋)1,2, Guo-Ping Guo(郭国平)1,2   

  1. 1 Key Laboratory of Quantum Information, University of Science and Technology of China, Chinese Academy of Sciences, Hefei 230026, China;
    2 Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei 230026, China;
    3 National Institute for Materials Science, Namiki 1-1, Ibaraki 305-0044, Japan
  • Received:2018-03-10 Revised:2018-05-11 Online:2018-08-05 Published:2018-08-05
  • Contact: Xi-Feng Ren, Guo-Ping Guo E-mail:renxf@ustc.edu.cn;gpguo@ustc.edu.cn
  • Supported by:

    Project supported by the National Key Research and Development Program of China (Grant No. 2016YFA0301700), the National Natural Science Foundation of China (Grant Nos. 61590932, 11774333, 61674132, 11674300, 11575172, and 11625419), the Anhui Provincial Initiative in Quantum Information Technologies, China (Grant Nos. AHY080000 and AHY130300), the Strategic Priority Research Program of the Chinese Academy of Sciences (Grant No. XDB24030601), and the Fundamental Research Funds for the Central Universities, China. This work was partially carried out at the USTC Center for Micro and Nanoscale Research and Fabrication.

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摘要：

Monolayer transition-metal dichalcogenides (TMDs) are considered to be fantastic building blocks for a wide variety of optical and optoelectronic devices such as sensors, photodetectors, and quantum emitters, owing to their direct band gap, transparency, and mechanical flexibility. The core element of many conventional electronic and optoelectronic devices is the p-n junction, in which the p- and n-types of the semiconductor are formed by chemical doping in different regions. Here, we report a series of optoelectronic studies on a monolayer WSe2 in-plane p-n photodetector, demonstrating a low-power dissipation by showing an ambipolar behavior with a reduced threshold voltage by a factor of two compared with the previous results on a lateral electrostatically doped WSe2 p-n junction. The fabrication of the device is based on a polycarbonates (PC) transfer technique and hence no electron-beam exposure induced damage to the monolayer WSe2 is expected. Upon optical excitation, the photodetector demonstrates a photoresponsivity of 0.12 mA·W-1 and a maximum external quantum efficiency of 0.03%. Our study provides an alternative platform for a flexible and transparent two-dimensional photodetector, from which we expect to further promote the development of next-generation optoelectronic devices.

关键词: WSe2, photodetector, transfer technique, p-n junction

Abstract:

Monolayer transition-metal dichalcogenides (TMDs) are considered to be fantastic building blocks for a wide variety of optical and optoelectronic devices such as sensors, photodetectors, and quantum emitters, owing to their direct band gap, transparency, and mechanical flexibility. The core element of many conventional electronic and optoelectronic devices is the p-n junction, in which the p- and n-types of the semiconductor are formed by chemical doping in different regions. Here, we report a series of optoelectronic studies on a monolayer WSe2 in-plane p-n photodetector, demonstrating a low-power dissipation by showing an ambipolar behavior with a reduced threshold voltage by a factor of two compared with the previous results on a lateral electrostatically doped WSe2 p-n junction. The fabrication of the device is based on a polycarbonates (PC) transfer technique and hence no electron-beam exposure induced damage to the monolayer WSe2 is expected. Upon optical excitation, the photodetector demonstrates a photoresponsivity of 0.12 mA·W-1 and a maximum external quantum efficiency of 0.03%. Our study provides an alternative platform for a flexible and transparent two-dimensional photodetector, from which we expect to further promote the development of next-generation optoelectronic devices.

Key words: WSe2, photodetector, transfer technique, p-n junction

中图分类号:  (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)

  • 73.40.Lq
85.60.Dw (Photodiodes; phototransistors; photoresistors)