A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET

doi:10.1088/1674-1056/25/10/108503

中国物理B ›› 2016, Vol. 25 ›› Issue (10): 108503-108503.doi: 10.1088/1674-1056/25/10/108503

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET

Shweta Tripathi

Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad-211004, India

收稿日期:2016-05-12 修回日期:2016-06-17 出版日期:2016-10-05 发布日期:2016-10-05
通讯作者: Shweta Tripathi E-mail:shtri@mnnit.ac.in

A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET

Shweta Tripathi

Department of Electronics & Communication Engineering, Motilal Nehru National Institute of Technology, Allahabad-211004, India

Received:2016-05-12 Revised:2016-06-17 Online:2016-10-05 Published:2016-10-05
Contact: Shweta Tripathi E-mail:shtri@mnnit.ac.in

摘要/Abstract

摘要： In the present work, a two-dimensional(2D) analytical framework of triple material symmetrical gate stack (TMGS) DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using two-dimensional (2D) ATLAS^TM device simulator to affirm and formalize the proposed device structure.

关键词: triple material symmetrical gate stack (TMGS) DG MOSFET, gate stack, short channel effect, drain induced barrier lowering, threshold voltage

Abstract: In the present work, a two-dimensional(2D) analytical framework of triple material symmetrical gate stack (TMGS) DG-MOSFET is presented in order to subdue the short channel effects. A lightly doped channel along with triple material gate having different work functions and symmetrical gate stack structure, showcases substantial betterment in quashing short channel effects to a good extent. The device functioning amends in terms of improved exemption to threshold voltage roll-off, thereby suppressing the short channel effects. The encroachments of respective device arguments on the threshold voltage of the proposed structure are examined in detail. The significant outcomes are compared with the numerical simulation data obtained by using two-dimensional (2D) ATLAS^TM device simulator to affirm and formalize the proposed device structure.

Key words: triple material symmetrical gate stack (TMGS) DG MOSFET, gate stack, short channel effect, drain induced barrier lowering, threshold voltage

中图分类号: (Field effect devices)

85.30.Tv

85.30.-z (Semiconductor devices) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 12.39.Pn (Potential models)

Shweta Tripathi. A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET[J]. 中国物理B, 2016, 25(10): 108503-108503.

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A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET

A two-dimensional analytical modeling for channel potential and threshold voltage of short channel triple material symmetrical gate Stack (TMGS) DG-MOSFET

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