中国物理B ›› 2016, Vol. 25 ›› Issue (6): 67303-067303.doi: 10.1088/1674-1056/25/6/067303

所属专题: TOPICAL REVIEW — Low-dimensional complex oxide structures

• TOPICAL REVIEW—Low-dimensional complex oxide structures • 上一篇    下一篇

Modulation of physical properties of oxide thin films by multiple fields

Hua-Li Yang(杨华礼), Bao-Min Wang(王保敏), Xiao-Jian Zhu(朱小健), Jie Shang(尚杰), Bin Chen(陈斌), Run-Wei Li(李润伟)   

  1. 1 Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
    2 Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 收稿日期:2015-03-17 修回日期:2015-05-04 出版日期:2016-06-05 发布日期:2016-06-05
  • 通讯作者: Bao-Min Wang, Run-Wei Li E-mail:wangbaomin@nimte.ac.cn;runweili@nimte.ac.cn
  • 基金资助:

    Project supported by the State Key Project of Fundamental Research of China (Grant No. 2012CB933004), the National Natural Science Foundation of China (Grant Nos. 11474295, 51571208, 51525103, and 11274322), Overseas, Hong Kong & Macao Scholars Collaborated Researching Fund (Grant No. 51428201), the Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YZ201327), Ningbo Major Project for Science and Technology (Grant No. 2014B11011), Ningbo International Cooperation Projects (Grant Nos. 2012D10018 and 2014D10005), the Fund for Ningbo Science and Technology Innovation Team (Grant No. 2015B11001), the Youth Innovation Promotion Association of the Chinese Academy of Sciences, and the Key Research Program of the Chinese Academy of Sciences (Grant No. KJZD-EW-M05).

Modulation of physical properties of oxide thin films by multiple fields

Hua-Li Yang(杨华礼)1,2, Bao-Min Wang(王保敏)1,2, Xiao-Jian Zhu(朱小健)1,2, Jie Shang(尚杰)1,2, Bin Chen(陈斌)1,2, Run-Wei Li(李润伟)1,2   

  1. 1 Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China;
    2 Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • Received:2015-03-17 Revised:2015-05-04 Online:2016-06-05 Published:2016-06-05
  • Contact: Bao-Min Wang, Run-Wei Li E-mail:wangbaomin@nimte.ac.cn;runweili@nimte.ac.cn
  • Supported by:

    Project supported by the State Key Project of Fundamental Research of China (Grant No. 2012CB933004), the National Natural Science Foundation of China (Grant Nos. 11474295, 51571208, 51525103, and 11274322), Overseas, Hong Kong & Macao Scholars Collaborated Researching Fund (Grant No. 51428201), the Instrument Developing Project of the Chinese Academy of Sciences (Grant No. YZ201327), Ningbo Major Project for Science and Technology (Grant No. 2014B11011), Ningbo International Cooperation Projects (Grant Nos. 2012D10018 and 2014D10005), the Fund for Ningbo Science and Technology Innovation Team (Grant No. 2015B11001), the Youth Innovation Promotion Association of the Chinese Academy of Sciences, and the Key Research Program of the Chinese Academy of Sciences (Grant No. KJZD-EW-M05).

摘要:

Recent studies of the modulation of physical properties in oxide thin films by multiple fields are reviewed. Some of the key issues and prospects of this area of study are also addressed. Oxide thin films exhibit versatile physical properties such as magnetism, ferroelectricity, piezoelectricity, metal-insulator transition (MIT), multiferroicity, colossal magnetoresistivity, switchable resistivity. More importantly, the exhibited multifunctionality can be tuned by various external fields, which has enabled demonstration of novel electronic devices.

关键词: multiple fields, functional oxides, thin film

Abstract:

Recent studies of the modulation of physical properties in oxide thin films by multiple fields are reviewed. Some of the key issues and prospects of this area of study are also addressed. Oxide thin films exhibit versatile physical properties such as magnetism, ferroelectricity, piezoelectricity, metal-insulator transition (MIT), multiferroicity, colossal magnetoresistivity, switchable resistivity. More importantly, the exhibited multifunctionality can be tuned by various external fields, which has enabled demonstration of novel electronic devices.

Key words: multiple fields, functional oxides, thin film

中图分类号:  (Electronic transport in mesoscopic systems)

  • 73.23.-b
73.50.Pz (Photoconduction and photovoltaic effects) 77.55.Nv (Multiferroic/magnetoelectric films)