›› 2014, Vol. 23 ›› Issue (7): 77401-077401.doi: 10.1088/1674-1056/23/7/077401

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Formation of epitaxial Tl2Ba2Ca2Cu3O10 superconducting films by dc-magnetron sputtering and triple post-annealing method

解伟a, 王培a, 季鲁a, 葛德永a, 杜佳男a, 高晓昕a, 刘欣a, 宋凤斌b, 胡磊a, 张旭a, 何明a, 赵新杰a   

  1. a College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China;
    b The 10th institute of Chinese Electronic Technology Corporation, Chengdu 610036, China
  • 收稿日期:2013-08-09 修回日期:2014-01-02 出版日期:2014-07-15 发布日期:2014-07-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51002081 and 61176119).

Formation of epitaxial Tl2Ba2Ca2Cu3O10 superconducting films by dc-magnetron sputtering and triple post-annealing method

Xie Wei (解伟)a, Wang Pei (王培)a, Ji Lu (季鲁)a, Ge De-Yong (葛德永)a, Du Jia-Nan (杜佳男)a, Gao Xiao-Xin (高晓昕)a, Liu Xin (刘欣)a, Song Feng-Bin (宋凤斌)b, Hu Lei (胡磊)a, Zhang Xu (张旭)a, He Ming (何明)a, Zhao Xin-Jie (赵新杰)a   

  1. a College of Electronic Information and Optical Engineering, Nankai University, Tianjin 300071, China;
    b The 10th institute of Chinese Electronic Technology Corporation, Chengdu 610036, China
  • Received:2013-08-09 Revised:2014-01-02 Online:2014-07-15 Published:2014-07-15
  • Contact: Zhao Xin-Jie E-mail:zhaoxj@nankai.edu.cn
  • About author:74.78.-w
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 51002081 and 61176119).

摘要: For obtaining pure phase Tl2Ba2Ca2Cu3O10 (Tl-2223) films with good superconducting properties, the growth technique is improved by dc magnetron sputtering and a triple post-annealing process. The triple post-annealing process comprises annealing twice in argon and once in oxygen at different temperatures. In the first low-temperature annealing phase in argon, Tl2Ba2CaCu2O8 (Tl-2212) is obtained to effectively minimize evaporation in the next step. With the increase of temperature in the second annealing stage in argon, the previously prepared Tl-2212 inter-phase is converted into Tl-2223 phase. An additional annealing in oxygen is also adopted to improve the properties of Tl-2223 films, each containing an optimal oxygen content value. The results of X-ray diffraction (XRD) θ -2θ scans, ω scans and rotational ø scans show that each of the Tl-2223 films has a high phase purity and an epitaxial structure. Smooth films are observed by scanning electron microscopy (SEM). The critical temperatures Tc of the films are measured to be about 120 K and the critical current densities Jc can reach 4.0 MA/cm2 at 77 K at self field.

关键词: Tl-2223 superconducting films, post-annealing, critical temperature, critical current density

Abstract: For obtaining pure phase Tl2Ba2Ca2Cu3O10 (Tl-2223) films with good superconducting properties, the growth technique is improved by dc magnetron sputtering and a triple post-annealing process. The triple post-annealing process comprises annealing twice in argon and once in oxygen at different temperatures. In the first low-temperature annealing phase in argon, Tl2Ba2CaCu2O8 (Tl-2212) is obtained to effectively minimize evaporation in the next step. With the increase of temperature in the second annealing stage in argon, the previously prepared Tl-2212 inter-phase is converted into Tl-2223 phase. An additional annealing in oxygen is also adopted to improve the properties of Tl-2223 films, each containing an optimal oxygen content value. The results of X-ray diffraction (XRD) θ -2θ scans, ω scans and rotational ø scans show that each of the Tl-2223 films has a high phase purity and an epitaxial structure. Smooth films are observed by scanning electron microscopy (SEM). The critical temperatures Tc of the films are measured to be about 120 K and the critical current densities Jc can reach 4.0 MA/cm2 at 77 K at self field.

Key words: Tl-2223 superconducting films, post-annealing, critical temperature, critical current density

中图分类号:  (Superconducting films and low-dimensional structures)

  • 74.78.-w