Boron implanted emitter for n-type silicon solar cell

doi:10.1088/1674-1056/24/3/038801

中国物理B ›› 2015, Vol. 24 ›› Issue (3): 38801-038801.doi: 10.1088/1674-1056/24/3/038801

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

Boron implanted emitter for n-type silicon solar cell

梁鹏, 韩培德, 范玉洁, 邢宇鹏

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

收稿日期:2014-09-27 修回日期:2014-10-23 出版日期:2015-03-05 发布日期:2015-03-05
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61275040, 60976046, and 61021003) and the National Basic Research Program of China (Grant No. 2012CB934200).

Boron implanted emitter for n-type silicon solar cell

Liang Peng (梁鹏), Han Pei-De (韩培德), Fan Yu-Jie (范玉洁), Xing Yu-Peng (邢宇鹏)

State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Received:2014-09-27 Revised:2014-10-23 Online:2015-03-05 Published:2015-03-05
Contact: Liang Peng E-mail:liangpeng@semi.ac.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61275040, 60976046, and 61021003) and the National Basic Research Program of China (Grant No. 2012CB934200).

摘要/Abstract

摘要：

The effects of ion doses on the properties of boron implanted Si for n-type solar cell application were investigated with doses ranging from 5× 10¹⁴ cm^-2 to 2× 10¹⁵ cm^-2 and a subsequent two-step annealing process in a tube furnace. With the help of the TCAD process simulation tool, knowledge on diffusion kinetics of dopants and damage evolution was obtained by fitting SIMS measured boron profiles. Due to insufficient elimination of the residual damage, the implanted emitter was found to have a higher saturation current density (J_0e) and a poorer crystallographic quality. Consistent with this observation, V_oc, J_sc, and the efficiency of the all-implanted p⁺-n-n⁺ solar cells followed a decreasing trend with an increase of the implantation dose. The obtained maximum efficiency was 19.59% at a low dose of 5× 10¹⁴ cm^-2. The main efficiency loss under high doses came not only from increased recombination of carriers in the space charge region revealed by double-diode parameters of dark I-V curves, but also from the degraded minority carrier diffusion length in the emitter and base evidenced by IQE data. These experimental results indicated that clusters and dislocation loops had appeared at high implantation doses, which acted as effective recombination centers for photogenerated carriers.

关键词: boron implanted emitter, n-type silicon, clusters and dislocation loops, saturation current density

Abstract:

Key words: boron implanted emitter, n-type silicon, clusters and dislocation loops, saturation current density

中图分类号: (Silicon solar cells)

88.40.jj

梁鹏, 韩培德, 范玉洁, 邢宇鹏. Boron implanted emitter for n-type silicon solar cell[J]. 中国物理B, 2015, 24(3): 38801-038801.

Liang Peng (梁鹏), Han Pei-De (韩培德), Fan Yu-Jie (范玉洁), Xing Yu-Peng (邢宇鹏). Boron implanted emitter for n-type silicon solar cell[J]. Chin. Phys. B, 2015, 24(3): 38801-038801.

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Boron implanted emitter for n-type silicon solar cell

Boron implanted emitter for n-type silicon solar cell

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