Progress in bulk GaN growth

doi:10.1088/1674-1056/24/6/066105

中国物理B ›› 2015, Vol. 24 ›› Issue (6): 66105-066105.doi: 10.1088/1674-1056/24/6/066105

所属专题： TOPICAL REVIEW — III-nitride optoelectronic materials and devices

• TOPICAL REVIEW—III-nitride optoelectronic materials and devices • 上一篇下一篇

Progress in bulk GaN growth

徐科^{a b}, 王建峰^{a b}, 任国强^{a b}

a Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
b Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China

收稿日期:2015-05-04 修回日期:2015-05-11 发布日期:2015-06-25
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61325022 and 11435010), the National Basic Research Program of China (Grant No. 2012CB619305), and the National High Technology Research and Development Program of China (Grant No. 2014AA03260).

Progress in bulk GaN growth

Xu Ke (徐科)^{a b}, Wang Jian-Feng (王建峰)^{a b}, Ren Guo-Qiang (任国强)^{a b}

a Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215123, China;
b Suzhou Nanowin Science and Technology Co., Ltd., Suzhou 215123, China

Received:2015-05-04 Revised:2015-05-11 Published:2015-06-25
Contact: Xu Ke E-mail:kxu2006@sinano.ac.cn
About author:61.72.uj; 81.05.Ea; 81.10.Bk; 61.72.-y
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 61325022 and 11435010), the National Basic Research Program of China (Grant No. 2012CB619305), and the National High Technology Research and Development Program of China (Grant No. 2014AA03260).

摘要/Abstract

摘要：

Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy (HVPE), Na-flux method, and ammonothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of GaN film. The growth mechanisms of GaN by Na-flux and ammonothermal methods are compared with those of HVPE. The mechanical behaviors of dislocation in bulk GaN are investigated through nano-indentation and high-space resolution surface photo-voltage spectroscopy. In the last part, the progress in growing some devices on GaN substrate by homo-epitaxy is introduced.

关键词: nitride semiconductor, bulk GaN, hydride vapor phase epitaxy (HVPE), dislocation

Abstract:

Key words: nitride semiconductor, bulk GaN, hydride vapor phase epitaxy (HVPE), dislocation

中图分类号: (III-V and II-VI semiconductors)

61.72.uj

81.05.Ea (III-V semiconductors) 81.10.Bk (Growth from vapor) 61.72.-y (Defects and impurities in crystals; microstructure)

徐科, 王建峰, 任国强. Progress in bulk GaN growth[J]. 中国物理B, 2015, 24(6): 66105-066105.

Xu Ke (徐科), Wang Jian-Feng (王建峰), Ren Guo-Qiang (任国强). Progress in bulk GaN growth[J]. Chin. Phys. B, 2015, 24(6): 66105-066105.

参考文献 168

[1]	Teke Ali and Morkoç Hadis 2007 Handbook of Electronic and Photonic Materials (New York: Springer-Verlag) US 753-804
[2]	Morkoç Hadis 2009 Handbook of Nitride Semiconductors and Devices (Weinheim: Wiley-VCH Verlag GmbH & Co. KGaA) pp. 1-129
[3]	Morkoç Hadis 2009 Handbook of Nitride Semiconductors and Devices (Weinheim: Wiley-VCH Verlag GmbH & Co. KGaA) pp. 1-168
[4]	Morkoç Hadis 2009 Handbook of Nitride Semiconductors and Devices (Weinheim: Wiley-VCH Verlag GmbH & Co. KGaA) pp. 169-347
[5]	Morkoç Hadis 2009 Handbook of Nitride Semiconductors and Devices (Weinheim: Wiley-VCH Verlag GmbH & Co. KGaA) pp. 349-707
[6]	Morkoç Hadis 2009 Handbook of Nitride Semiconductors and Devices (Weinheim: Wiley-VCH Verlag GmbH & Co. KGaA) pp. 709-829
[7]	Jain S C, Willander M, Narayan J and Van Overstraeten R 2000 J. Appl. Phys. 87 965
[8]	Amano H, Sawaki N, Akasaki I and Toyoda Y 1986 Appl. Phys. Lett. 48 353
[9]	Amano Hiroshi, Kito Masahiro, Hiramatsu Kazumasa and Akasaki Isamu 1989 Jpn. J. Appl. Phys. 28 L2112
[10]	Nakamura Shuji, Senoh Masayuki and Mukai Takashi 1993 Jpn. J. Appl. Phys. 32 L8
[11]	Hiramatsu Kazumasa 2001 J. Phys.: Condens. Matter 13 6961
[12]	Nakamura Shuji, Senoh Masayuki, Nagahama ShinichiIwasa, Naruhito Yamada, Takao Matsushita, Toshio Kiyoku, Hiroyuki Sugimoto, Yasunobu Kozaki, Tokuya Umemoto, Hitoshi Sano Masahiko and Chocho Kazuyuki 1998 Appl. Phys. Lett. 72 2014
[13]	Utsumi W, Saitoh H, Kaneko H, Watanuki T, Aoki K and Shimomura O 2003 Nat. Mater. 2 735
[14]	Paskova Tanya, Hanser D A and Evans K R 2010 P. IEEE 98 1324
[15]	Yamane H, Shimada M, Clarke S J and DiSalvo F J 1997 Chem. Mater. 9 413
[16]	Bockowski M 2007 Cryst. Res. Technol. 42 1162
[17]	Lourdudoss S, Gopalakrishnan N, Holz R, Deschler M and Beccard R 1998 Value-Addition Metallurgy 177
[18]	Karpinski J, Jun J and Porowski S 1984 J. Cryst. Growth 66 1
[19]	Mori Y, Kitaoka Y, Imade M, Kawamura F, Miyoshi N, Yoshimura M and Sasaki T 2010 Phys. Status Solidi A 207 1283
[20]	Dwilinski R, Doradzinski R, Garczynski J, Sierzputowski L, Kucharski R, Rudzinski M, Zajac M and Kudrawiec R 2009 Phys. Status Solidi C 12 2661
[21]	Fukuda T and Ehrentraut D 2007 J. Cryst. Growth 305 304
[22]	Murakami H, Kikuchi J, Kumagai Y and Koukitu A 2006 Phys. Status Solidi C 3 1457
[23]	Koukitu A, Hama S, Taki T and Seki H 1998 Jpn. J. Appl. Phys. 37 762
[24]	Koukitu A, Kikuchi J, Kangawa Y and Kumagai Y 2005 J. Cryst. Growth 281 47
[25]	Kumagai Y, Takemoto K, Hasegawa T, Koukitu A and Seki H 2001 J. Cryst. Growth 231 57
[26]	Imanishi M, Murakami K, Imabayashi H, Takazawa H, Todoroki Y, Matsuo D, Maruyama M, Imade M, Yoshimura M and Mori Y 2013 Phys. Status Solidi C 10 400
[27]	Dwilinski Robert, Doradzinski Roman, Garczynski Jerzy, Sierzputowski Leszek, Kucharski Robert, Zajac Marcin, Rudzinski Mariusz, Kudrawiec Robert, Strupinski Wlodzimierz and Misiewicz Jan 2011 Phys. Status Solidi A 208 1489
[28]	Hiramatsu K, Nishiyama K, Motogaito A, Miyake H, Iyechika Y and Maeda T 1999 Phys. Status Solidi A 176 535
[29]	Usui A, Sunakawa H, Sakai A and Yamaguchi A A 1997 Jpn. J. Appl. Phys. 36 L899
[30]	Kawaguchi Y, Nambu S, Sone H, Yamaguchi M, Miyake H, Hiramatsu K, Sawaki N, Iyechika Y and Maeda T 1999 Mrs Internet Journal of Nitride Semiconductor Research 4 art. no.-G4.1
[31]	Kawaguchi Y, Nambu S, Yamaguchi M, Sawaki N, Miyake H, Hiramatsu K, Tsukamoto K, Kuwano N and Oki K 1999 Phys. Status Solidi A 176 561
[32]	Kawaguchi Y, Honda Y, Yamaguchi M, Sawaki N and Hiramatsu K 1999 Phys. Status Solidi A 176 553
[33]	Yu Z H, Johnson M A L, Brown J D, El-Masry N A, Muth J F, Cook J W, Schetzina J F, Haberern K W, Kong H S and Edmond J S 1999 Mrs Internet Journal of Nitride Semiconductor Research 4 G4.3
[34]	Yun F, Moon Y T, Fu Y, Zhu K, Ozgur U, Morkoc H, Inoki C K, Kuan T S, Sagar A and Feenstra R M 2005 J. Appl. Phys. 98 8
[35]	Nagahama S, Iwasa N, Senoh M, Matsushita T, Sugimoto Y, Kiyoku H, Kozaki T, Sano M, Matsumura H, Umemoto H, Chocho K, and Mukai T 2000 Jpn. J. Appl. Phys. 39 L647
[36]	Motoki K, Okahisa T, Nakahata S, Matsumoto N, Kimura H, Kasai H, Takemoto K, Uematsu K, Ueno M, Kumagai Y, Koukitu A and Seki H 2002 J. Cryst. Growth 237 912
[37]	Motoki K, Okahisa T, Nakahata S, Matsumoto A, Kimura H, Kasai H, Takemoto K, Uematsu K, Ueno M, Kumagai Y, Koukitu A and Seki H 2002 Mater. Sci. Eng. B: Solid State Mater. Adv. Technol. 93 123
[38]	Motoki K, Okahisa T, Hirota R, Nakahata S, Uematsu K and Matsumoto N 2007 J. Cryst. Growth 305 377
[39]	Oshima Y, Eri T, Shibata M, Sunakawa H, Kobayashi K, Ichihashi T and Usui A 2003 Jpn. J. Appl. Phys. 42 L1
[40]	Liu J Q, Huang J, Gong X J, Wang J F, Xu K, Qiu Y X, Cai D M, Zhou T F, Ren G Q and Yang H 2011 Crystengcomm. 13 5929
[41]	Fujito K, Kubo S, Nagaoka H, Mochizuki T Namita H and Nagao S 2009 J. Cryst. Growth 311 3011
[42]	Oshima Y, Eri T, Shibata M, Sunakawa H and Usui A 2002 Phys. Status Solidi A 194 554
[43]	Oshima Y, Eri T, Shibata M, Sunakawa H, Kobayashi K, Ichihashi T and Usui A 2003 Jpn. J. Appl. Phys. 42 L1
[44]	Yoshida T, Oshima Y, Eri T, Ikeda K, Yamamoto S, Watanabe K, Shibata M and Mishima T 2008 J. Cryst. Growth 310 5
[45]	Lipski F, Wunderer T, Schwaiger S and Scholz F 2010 Phys. Status Solidi A 207 1287
[46]	Hennig C, Richter E, Weyers M and Trankle G 2007 Phys. Status Solidi C 4 2638
[47]	Nikolaev V, Golovatenko A, Mynbaeva M, Nikitina I, Seredova N, Pechnikov A, Bougrov V and Odnobludov M 2014 Phys. Status Solidi C 11 502
[48]	Luo W K, Wu J J, Goldsmith J, Du Y H, Yu T J, Yang Z J and Zhang G Y 2012 J. Cryst. Growth 340 18
[49]	Sato Tadashige, Okano Shinya, Goto Takenari, Yao Takafumi, Seto Ritsu, Sato Akira and Goto Hideki 2013 Jpn. J. Appl. Phys. 52 08JA08
[50]	Li X B, Wu J J, Liu N L, Han T, Kang X N, Yu T J and Zhang G Y 2014 Mater. Lett. 132 94
[51]	Wong W S, Sands T and Cheung N W 1998 Appl. Phys. Lett. 72 599
[52]	Kelly M K, Vaudo R P, Phanse V M, Gorgens L, Ambacher O and Stutzmann M 1999 Jpn. J. Appl. Phys. 38 L217
[53]	Miskys Claudio R, Kelly Michael K, Ambacher Oliver and Stutzmann Martin 2003 Phys. Status Solidi C 0 1627
[54]	Su X J, Xu K, Xu Y, Ren G Q, Zhang J C, Wang J F and Yang H 2013 J. Phys. D: Appl. Phys. 46 205103
[55]	Kisielowski C, Kruger J, Ruvimov S, Suski T, Ager J W, Jones E, Liliental Weber Z, Rubin M, Weber E R, Bremser M D and Davis R F 1996 Phys. Rev. B 54 17745
[56]	Huang Hsin-Hsiung, Chen Kuei-Ming, Tu Li-Wei, Chu Ting-Li, Wu Pei-Lun, Yu Hung-Wei, Chiang Chen-Hao and Lee Wei I 2008 Jpn. J. Appl. Phys. 47 8394
[57]	Monemar B, Larsson H, Hemmingsson C, Ivanov I G and Gogova D 2005 J. Cryst. Growth 281 17
[58]	Park S S, Park I W and Choh S H 2000 Jpn. J. Appl. Phys. 39 L1141
[59]	Nakamura S, Mukai T and Senoh M 1992 Jpn. J. Appl. Phys. 31 2883
[60]	Fomin A V, Nikolaev A E, Nikitina I P, Zubrilov A S, Mynbaeva M G, Kuznetsov N I, Kovarsky A P and Ber B J 2001 Phys. Status Solidi A 188 433
[61]	Richter E, Hennig Ch, Zeimer U, Wang L, Weyers M and Tränkle G 2006 Phys. Status Solidi A 203 1658
[62]	Weimann N G, Eastman L F, Doppalapudi D, Ng H M and Moustakas T D 1998 J. Appl. Phys. 83 3656
[63]	Polyakov A Y, Smirnov N B, Govorkov A V, Pashkova N Y, Kim J, Ren F, Overberg M E, Thaler G T, Abernathy C R, Pearton S J and Wilson R G 2002 J. Appl. Phys. 92 3130
[64]	Malguth E, Hoffmann A, Gehlhoff W, Gelhausen O, Phillips M R and Xu X 2006 Phys. Rev. B 74 165202
[65]	Monemar B and Lagerstedt O 1979 J. Appl. Phys. 50 6480
[66]	Vaudo R P, Xu X P, Salant A, Malcarne J and Brandes G R 2003 Phys. Status Solidi A 200 18
[67]	Polyakov A Y, Smirnov N B, Govorkov A V, Pashkova N V, Shlensky A A, Pearton S J, Overberg M E, Abernathy C R, Zavada J M and Wilson R G 2003 J. Appl. Phys. 93 5388
[68]	Kubota M, Onuma T, Ishihara Y, Usui A, Uedono A and Chichibu S F 2009 J. Appl. Phys. 105 083542
[69]	Polyakov A Y, Smirnov N B, Govorkov A V and Pearton S J 2003 Appl. Phys. Lett. 83 3314
[70]	Fan Y M, Liu Z H, Xu G Z, Zhong H J, Huang Z L, Zhang Y M, Wang J F and Xu K 2014 Appl. Phys. Lett. 105 062108
[71]	Polyakov A Y, Smirnov N B, Govorkov A V, Yugova T G, Markov A V, Dabiran A M, Wowchak A M, Cui B, Xie J, Osinsky A V, Chow P P and Pearton S J 2008 Appl. Phys. Lett. 92 042110
[72]	Bonanni A, Kiecana M, Simbrunner C, Li T, Sawicki M, Wegscheider M, Quast M, Przybylinska H, Navarro-Quezada A, Jakiela R, Wolos A, Jantsch W and Dietl T 2007 Phys. Rev. B 75 125210
[73]	Bonanni A, Navarro-Quezada A, Li T, Wegscheider M, Matej Z, Holy V, Lechner R T, Bauer G, Rovezzi M, D'Acapito F, Kiecana M, Sawicki M and Dietl T 2008 Phys. Rev. Lett. 101 135502
[74]	Dumcenco D O, Levcenco S, Huang Y S, Reynolds C L, Reynolds J G, Tiong K K, Paskova T and Evans K R 2011 J. Appl. Phys. 109 123508
[75]	Langer J M and Heinrich H 1985 Phys. Rev. Lett. 55 1414
[76]	Heitz R, Maxim P, Eckey L, Thurian P, Hoffmann A, Broser I, Pressel K and Meyer B K 1997 Phys. Rev. B 55 4382
[77]	Zhang M, Zhou T F, Zhang Y M, Li B, Zheng S N, Huang J, Sun Y P, Ren G Q, Wang J F, Xu K and Yang H 2012 Appl. Phys. Lett. 100 041904
[78]	Amano H 2013 Jpn. J. Appl. Phys. 52 050001
[79]	Imade M, Hirabayashi Y, Konishi Y, Ukegawa H, Miyoshi N, Yoshimura M, Sasaki T, Kitaoka Y and Mori Y 2010 Appl. Phys. Express 3 075501
[80]	Mori Y, Imade M, Maruyama M and Yoshimura M 2013 Ecs Journal of Solid State Science and Technology 2 N3068
[81]	Kawamura F, Iwahashi T, Omae K, Morishita M, Yoshimura M, Mori Y and Sasaki T 2003 Jpn. J. Appl. Phys. 42 L4
[82]	Kawamura F, Morishita M, Omae K, Yoshimura M, Mori Y and Sasaki T 2003 Jpn. J. Appl. Phys. 42 L879
[83]	Kawamura F, Morishita M, Omae K, Yoshimura M, Mori Y and Sasaki T 2005 J. Mater. Sci. 16 29
[84]	Kawamura F, Morishita M, Tanpo M, Imade M, Yoshimura M, Kitaoka Y, Mori Y and Sasaki T 2008 J. Cryst. Growth 310 3946
[85]	Imade M, Maruyama M, Yoshimura M and Mori Y 2014 Jpn. J. Appl. Phys. 53 05FA06
[86]	Liu Z L, Ren G Q, Shi L, Su X J, Wang J F and Xu K 2015 CrystEngcomm. 17 1030
[87]	Dwilinski R, Wysmolek A, Baranowski J, Kaminska M, Doradzinski R, Garczynski J, Sierzputowski L and Jacobs H 1995 Acta Phys. Polon. A 88 833
[88]	Dwilinski R, Doradzinski R, Garczynski J, Sierzputowski L P, Puchalski A, Kanbara Y, Yagi K, Minakuchi H and Hayashi H 2008 J. Cryst. Growth 310 3911
[89]	Kucharski R, Zajac M, Doradzinski R, Rudzinski M, Kudrawiec R and Dwilinski R 2012 Semicond. Sci. Technol. 27 024007
[90]	Kucharski R, Rudzinski M, Zajac M, Doradzinski R, Garczynski J, Sierzputowski L, Kudrawiec R, Serafinczuk J, Strupinski W and Dwilinski R 2009 Appl. Phys. Lett. 95 131119
[91]	Rudzinski M, Kudrawiec R, Janicki L, Serafinczuk J, Kucharski R, Zajac M, Misiewicz J, Doradzinski R, Dwilinski R and Strupinski W 2011 J. Cryst. Growth 328 5
[92]	Dwilinski R, Doradzinski R, Garczynski J, Sierzputowski L P, Zajac M and Rudzinski M 2009 J. Cryst. Growth 311 3058
[93]	Ehrentraut Dirk, Kagamitani Yuji, Fukuda Tsuguo, Orito Fumio, Kawabata Shinichiro, Katano Kizuku and Terada Shigeru 2008 J. Cryst. Growth 310 3902
[94]	Jiang W K, Ehrentraut Dirk, Downey Bradley C, Kamber Derrick S, Pakalapati Rajeev T, Do Yoo Hak and D'Evelyn Mark P 2014 J. Cryst. Growth 403 18
[95]	Ehrentraut Dirk, Pakalapati Rajeev T, Kamber Derrick S, Jiang Wenkan, Pocius Douglas W, Downey Bradley C, McLaurin Melvin and D'Evelyn Mark P 2013 Jpn. J. Appl. Phys. 52 08JA01
[96]	Wang Buguo, Bliss David, Suscavage Michael, Swider Stacy, Lancto Robert, Lynch Candace, Weyburne David, Li Ti and Ponce Fernando A 2011 J. Cryst. Growth 318 1030
[97]	Pimputkar S, Kawabata S, Speck J S and Nakamura S 2014 J. Cryst. Growth 403 7
[98]	Hashimoto Tadao, Letts Edward, Ikari Masanori and Nojima Yoshihiro 2010 J. Cryst. Growth 312 2503
[99]	Ehrentraut Dirk and Fukuda Tsuguo 2010 J. Cryst. Growth 312 2514
[100]	Dwilinski R, Doradzinski R, Garczynski J, Sierzputowski L, Kucharski R, Zajac M, Rudzinski M, Kudrawiec R, Serafinczuk J and Strupinski W 2010 J. Cryst. Growth 312 2499
[101]	Tomida D, Kagamitani Y, Bao Q, Hazu K, Sawayama H, Chichibu S F, Yokoyama C, Fukuda T and Ishiguro T 2012 J. Cryst. Growth 353 59
[102]	Yoshida Kazuo, Aoki Kensuke and Fukuda Tsuguo 2014 J. Cryst. Growth 393 93
[103]	Sintonen Sakari, Suihkonen Sami, Jussila Henri, Lipsanen Harri, Tuomi Turkka O, Letts Edward, Hoff Sierra and Hashimoto Tadao 2014 J. Cryst. Growth 406 72
[104]	Bao Quanxi, Hashimoto Takanori, Sato Fukuma, Hazu Kouji, Saito Makoto, Kagamitani Yuji, Ishinabe Takayuki, Kayano Rinzo, Tomida Daisuke, Qiao Kun, Chichibu Shigefusa F, Ishiguro Tohru and Yokoyama Chiaki 2013 Crystengcomm. 15 5382
[105]	Hashimoto Tadao, Wu Feng, Speck James S and Nakamura Shuji 2007 Nat. Mater. 6 568
[106]	Bliss David, Wang Buguo, Suscavage Michael, Lancto Robert, Swider Stacy, Eikenberry Wayne and Lynch Candace 2010 J. Cryst. Growth 312 1069
[107]	Pimputkar S, Kawabata S, Speck J S and Nakamura S 2013 J. Cryst. Growth 368 67
[108]	Gouldstone Andrew, Van Vliet Krystyn J and Suresh Subra 2001 Nature 411 656
[109]	Bradby J E, Kucheyev S O, Williams J S, Wong-Leung J, Swain M V, Munroe P, Li G and Phillips M R 2002 Appl. Phys. Lett. 80 383
[110]	Chien C H, Jian S R, Wang C T, Juang J Y, Huang J C and Lai Y S 2007 J. Phys. D: Appl. Phys. 40 3985
[111]	Huang J, Xu K, Gong X J, Wang J F, Fan Y M, Liu J Q, Zeng X H, Ren G Q, Zhou T F and Yang H 2011 Appl. Phys. Lett. 98 221906
[112]	Huang J, Xu K, Fan Y M, Niu M T, Zeng X H, Wang J F and Yang H 2012 Nanoscale Res. Lett. 7 150
[113]	Huang J, Xu K, Fan Y M, Wang J F, Zhang J C and Ren G Q 2014 Nanoscale Res. Lett. 9 1
[114]	Liu Z H, Xu K, Fan Y M, Xu G Z, Huang Z L, Zhong H J, Wang J F and Yang H 2012 Appl. Phys. Lett. 101 252107
[115]	Chernyak L, Osinsky A and Schulte A 2001 Solid State Electron. 45 1687
[116]	Scajev P, Jarasiunas K, Okur S, Ozgur U and Morkoc H 2012 J. Appl. Phys. 111 023702
[117]	Reshchikov M A, Foussekis M and Baski A A 2010 J. Appl. Phys. 107 113535
[118]	Wee D, Parish G and Nener B 2012 J. Appl. Phys. 111 074503
[119]	Cavallini A, Polenta L and Castaldini A 2010 Microelectron. Reliab. 50 1398
[120]	Vierheilig C, Eichler C, Tautz S, Lell A, Muller J, Kopp F, Stojetz B, Hager T, Bruderl G, Avramescu A, Lermer T, Ristic J and Strauss U 2012 Novel in-Plane Semiconductor Lasers Xi 8277 82770K
[121]	Michiue A, Miyoshi T, Kozaki T, Yanamoto T, Nagahama S and Mukai T 2009 Ieice T. Electron. E92c 194
[122]	Zhou K, Liu J P, Zhang S M, Li Z C, Feng M X, Li D Y, Zhang L Q, Wang F, Zhu J J and Yang H 2013 J. Cryst. Growth 371 7
[123]	Strauss U, Avramescu A, Lermer T, Queren D, Gomez-Iglesias A, Eichler C, Muller J, Bruderl G and Lutgen S 2011 Phys. Status Solidi B 248 652
[124]	Strauss U, Lermer T, Muller J, Hager T, Bruderl G, Avramescu A, Lell A and Eichler C 2012 Phys. Status Solidi A 209 481
[125]	Queren D, Schillgalies M, Avramescu A, Bruderl G, Laubsch A, Lutgen S and Strauss U 2009 J. Cryst. Growth 311 2933
[126]	Zhao Y J, Wu F, Huang C Y, Kawaguchi Y, Tanaka S, Fujito K, Speck J S, DenBaars S P and Nakamura S 2013 Appl. Phys. Lett. 102 091905
[127]	Funato M, Kim Y S, Hira T, Kaneta A, Kawakami Y, Miyoshi T and Nagahama S 2013 Appl. Phys. Express 6 111002
[128]	Funato M, Kim Y S, Ochi Y, Kaneta A, Kawakami Y, Miyoshi T and Nagahama S 2013 Appl. Phys. Express 6 122704
[129]	Kojima K, Schwarz U T, Funato M, Kawakami Y, Nagahama S and Mukai T 2007 Opt. Express 15 7730
[130]	Lermer T, Gomez-Iglesias A, Sabathil M, Muller J, Lutgen S, Strauss U, Pasenow B, Hader J, Moloney J V, Koch S W, Scheibenzuber W and Schwarz U T 2011 Appl. Phys. Lett. 98 021115
[131]	Miyoshi T, Masui S, Okada T, Yanamoto T, Kozaki T, Nagahama S and Mukai T 2009 Appl. Phys. Express 2 062201
[132]	Yanashima K, Nakajima H, Tasai K, Naganuma K, Fuutagawa N, Takiguchi Y, Hamaguchi T, Ikeda M, Enya Y, Takagi S, Adachi M, Kyono T, Yoshizumi Y, Sumitomo T, Yamanaka Y, Kumano T, Tokuyama S, Sumiyoshi K, Saga N, Ueno M, Katayama K, Ikegami T and Nakamura T 2012 Appl. Phys. Express 5 082103
[133]	Takagi S, Enya Y, Kyono T, Adachi M, Yoshizumi Y, Sumitomo T, Yamanaka Y, Kumano T, Tokuyama S, Sumiyoshi K, Saga N, Ueno M, Katayama K, Ikegami T, Nakamura T, Yanashima K, Nakajima H, Tasai K, Naganuma K, Fuutagawa N, Takiguchi Y, Hamaguchi T and Ikeda M 2012 Appl. Phys. Express 5 082102
[134]	Avramescu A, Lermer T, Muller J, Tautz S, Queren D, Lutgen S and Strauss U 2009 Appl. Phys. Lett. 95 071103
[135]	Avramescu A, Lermer T, Muller J, Eichler C, Bruederl G, Sabathil M, Lutgen S and Strauss U 2010 Appl. Phys. Express 3 061003
[136]	Huang C Y, Hardy M T, Fujito K, Feezell D F, Speck J S, DenBaars S P and Nakamura S 2011 Appl. Phys. Lett. 99 241115
[137]	Hardy M T, Wu F, Hsu P S, Haeger D A, Nakamura S, Speck J S and DenBaars S P 2013 J. Appl. Phys. 114 183101
[138]	Sizov D S, Bhat R, Zakharian A, Song K C, Allen D E, Coleman S and Zah C E 2011 IEEE J. Sel. Top. Quantum Electron. 17 1390
[139]	Raring J W, Schmidt M C, Poblenz C, Chang Y C, Mondry M J, Li B, Iveland J, Walters B, Krames M R, Craig R, Rudy P, Speck J S, DenBaars S P and Nakamura S 2010 Appl. Phys. Express 3 112101
[140]	Raring J W, Schmidt M C, Poblenz C, Li B, Chang Y C, Mondry M J, Lin Y D, Krames M R, Craig R, Speck J S, DenBaars S P and Nakamura S 2011 Gallium Nitride Materials and Devices Vi 7939 79390Y
[141]	Li Z C, Liu J P, Feng M X, Zhou K, Zhang S M, Wang H, Li D Y, Zhang L Q, Zhao D G, Jiang D S, Wang H B and Yang H 2013 Appl. Phys. Lett. 103 152109
[142]	Liu J P, Li Z C, Zhang L Q, Zhang F, Tian A Q, Zhou K, Li D Y, Zhang S M and Yang H 2014 Appl. Phys. Express 7 111001
[143]	Cho Jaehee, Schubert E Fred and Kim Jong Kyu 2013 Laser Photon. Rev. 7 408
[144]	Cao X A, LeBoeuf S F, D'Evelyn M P, Arthur S D, Kretchmer J, Yan C H and Yang Z H 2004 Appl. Phys. Lett. 84 4313
[145]	Wei T B, Wu K, Chen Y, Yu J, Yan Q, Zhang Y Y, Duan R, Wang J, Zeng Y and Li J M 2012 IEEE Electron Dev. Lett. 33 857
[146]	Tsai M T, Chu C M, Huang C H, Wu Y H, Chiu C H, Li Z Y, Tu P M, Lee W I and Kuo H C 2014 Nanoscale Res. Lett. 9 675
[147]	Cich Michael J, Aldaz Rafael I, Chakraborty Arpan, David Aurelien, Grundmann Michael J, Tyagi Anurag, Zhang Meng, Steranka Frank M and Krames Michael R 2012 Appl. Phys. Lett. 101 223509
[148]	David A, Hurni C A, Aldaz R I, Cich M J, Ellis B, Huang K, Steranka F M and Krames M R 2014 Appl. Phys. Lett. 105 231111
[149]	Hurni C A, David A, Cich M J, Aldaz R I, Ellis B, Huang K, Tyagi A, DeLille R A, Craven M D, Steranka F M and Krames M R 2015 Appl. Phys. Lett. 106 031101
[150]	Sato H, Tyagi A, Zhong H, Fellows N, Chung R B, Saito M, Fujito K, Speck J S, DenBaars S P and Nakamura S 2007 Phys. Status Solodi R 1 162
[151]	Jang J, Woo S, Min D and Nam O 2015 J. Nanosci. Nanotechnol. 15 1895
[152]	Zhou Yi, Wang Dake, Ahyi Claude, Tin Chin-Che, Williams John, Park Minseo, Williams N Mark and Hanser Andrew 2006 Solid State Electron 50 1744
[153]	Nie Hui, Diduck Quentin, Alvarez Brian, Edwards Andrew P, Kayes Brendan M, Zhang Ming, Ye Gangfeng, Prunty Thomas, Bour Dave and Kizilyalli Isik C 2014 IEEE Electron. Dev. Lett. 35 939
[154]	Meyer David J, Deen David A, Storm David F, Ancona Mario G, Katzer D, ScottBass Robert, Roussos Jason A, Downey Brian P, Binari Steven C, Gougousi Theodosia, Paskova Tanya, Preble Edward A and Evans Keith R 2013 IEEE Electron. Dev. Lett. 34 199
[155]	Kizilyalli Isik C, Edwards Andrew P, Aktas Ozgur, Prunty Thomas and Bour David 2015 IEEE T. Electron Dev. 62 414
[156]	Saitoh Yu, Sumiyoshi Kazuhide, Okada Masaya, Horii Taku, Miyazaki Tomihito, Shiomi Hiromu, Ueno Masaki, Katayama Koji, Kiyama Makoto and Nakamura Takao 2010 Appl. Phys. Express 3 081001
[157]	Ozbek A Merve and Baliga B Jayant 2011 IEEE Electron. Dev. Lett. 32 1361
[158]	Wu J, Walukiewicz W, Yu K M, Shan W, Ager J W, Haller E E, Lu Hai, Schaff William J, Metzger W K and Kurtz Sarah 2003 J. Appl. Phys. 94 6477
[159]	Neufeld Carl J, Toledo Nikholas G, Cruz Samantha C, Iza Michael Den, Baars Steven P and Mishra Umesh K 2008 Appl. Phys. Lett. 93 143502
[160]	Martí Antonio Luque and Antonio 1997 Phys. Rev. Lett. 78 4
[161]	Ho I Hsiu and Stringfellow G B 1996 Appl. Phys. Lett. 69 2701
[162]	Ashraful Ghani, Bhuiyan Kenichi Sugita, Akihiro Hashimoto and Akio Yamamoto 2012 IEEE J. Photovoltaics 2 18
[163]	Amano Hiroshi 2013 Jpn. J. Appl. Phys. 52 050001
[164]	Kuwahara Yousuke, Fujii Takahiro, Sugiyama ToruIida, DaisukeIsobe Yasuhiro, Fujiyama Yasuharu, Morita Yoshiki, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Akasaki Isamu and Amano Hiroshi 2011 Appl. Phys. Express 4 021001
[165]	Mori Mikiko, Kondo Shinichiro, Yamamoto Shota, Nakao Tatsuro, Fujii Takahiro, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Akasaki Isamu and Amano Hiroshi 2012 Appl. Phys. Express 5 082301
[166]	Kuwahara Yosuke, Fujii Takahiro, Fujiyama Yasuharu, Sugiyama Tohru, Iwaya Motoaki, Takeuchi Tetsuya, Kamiyama Satoshi, Akasaki Isamu and Amano Hiroshi 2010 Appl. Phys. Express 3 111001
[167]	Young N G, Farrell R M, Hu Y L, Terao Y, Iza M, Keller S, DenBaars S P, Nakamura S and Speck J S 2013 Appl. Phys. Lett. 103 173903
[168]	Young N G, Perl E E, Farrell R M, Iza M, Keller S, Bowers J E, Nakamura S, DenBaars S P and Speck J S 2014 Appl. Phys. Lett. 104 163902

Progress in bulk GaN growth

Progress in bulk GaN growth

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