中国物理B ›› 2015, Vol. 24 ›› Issue (2): 24212-024212.doi: 10.1088/1674-1056/24/2/024212

• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇    下一篇

Very low threshold operation of quantum cascade lasers

闫方亮, 张锦川, 姚丹阳, 刘峰奇, 王利军, 刘峻岐, 王占国   

  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
  • 收稿日期:2014-05-19 修回日期:2014-08-22 出版日期:2015-02-05 发布日期:2015-02-05
  • 基金资助:
    Project supported by the National Basic Research Program of China (Grant Nos. 2013CB632801 and 2013CB632803), the National Natural Science Foundation of China (Grant Nos. 61306058, 61274094, and 61435014), and the Beijing Natural Science Foundation (Grant No. 4144086).

Very low threshold operation of quantum cascade lasers

Yan Fang-Liang (闫方亮), Zhang Jin-Chuan (张锦川), Yao Dan-Yang (姚丹阳), Liu Feng-Qi (刘峰奇), Wang Li-Jun (王利军), Liu Jun-Qi (刘峻岐), Wang Zhan-Guo (王占国)   

  1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, and Beijing Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Beijing 100083, China
  • Received:2014-05-19 Revised:2014-08-22 Online:2015-02-05 Published:2015-02-05
  • Contact: Zhang Jin-Chuan, Liu Feng-Qi E-mail:zhangjinchuan@semi.ac.cn;fqliu@semi.ac.cn
  • Supported by:
    Project supported by the National Basic Research Program of China (Grant Nos. 2013CB632801 and 2013CB632803), the National Natural Science Foundation of China (Grant Nos. 61306058, 61274094, and 61435014), and the Beijing Natural Science Foundation (Grant No. 4144086).

RichHTML

1

PDF (PC)

510

赞

摘要： A strain-compensated InP-based quantum cascade laser (QCL) structure emitting at 4.6 μm is demonstrated, based on a two-phonon resonant design and grown by solid-source molecular beam epitaxy (MBE). By optimizing the growth parameters, a very high quality heterostructure with the lowest threshold current densities ever reported for QCLs was fabricated. Threshold current densities as low as 0.47 kA/cm2 in pulsed operation and 0.56 kA/cm2 in continuous-wave (cw) operation at 293 K were achieved for this state-of-the-art QCL. A minimum power consumption of 3.65 W was measured for the QCL, uncooled, with a high-reflectivity (HR) coating on its rear facet.

关键词: semiconductor laser, quantum cascade lasers, threshold current density

Abstract: A strain-compensated InP-based quantum cascade laser (QCL) structure emitting at 4.6 μm is demonstrated, based on a two-phonon resonant design and grown by solid-source molecular beam epitaxy (MBE). By optimizing the growth parameters, a very high quality heterostructure with the lowest threshold current densities ever reported for QCLs was fabricated. Threshold current densities as low as 0.47 kA/cm2 in pulsed operation and 0.56 kA/cm2 in continuous-wave (cw) operation at 293 K were achieved for this state-of-the-art QCL. A minimum power consumption of 3.65 W was measured for the QCL, uncooled, with a high-reflectivity (HR) coating on its rear facet.

Key words: semiconductor laser, quantum cascade lasers, threshold current density

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.))