An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

doi:10.1088/1674-1056/23/8/087201

›› 2014, Vol. 23 ›› Issue (8): 87201-087201.doi: 10.1088/1674-1056/23/8/087201

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

曹梦逸^a, 卢阳^a, 魏家行^b, 陈永和^a, 李卫军^b, 郑佳欣^a, 马晓华^{a b}, 郝跃^a

a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

收稿日期:2013-11-30 修回日期:2014-01-23 出版日期:2014-08-15 发布日期:2014-08-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61334002), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (Grant No. ZHD201206), and the Program for New Century Excellent Talents in University (Grant No. NCET-12-0915).

An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

Cao Meng-Yi (曹梦逸)^a, Lu Yang (卢阳)^a, Wei Jia-Xing (魏家行)^b, Chen Yong-He (陈永和)^a, Li Wei-Jun (李卫军)^b, Zheng Jia-Xin (郑佳欣)^a, Ma Xiao-Hua (马晓华)^{a b}, Hao Yue (郝跃)^a

a Key Laboratory for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China;
b School of Advanced Materials and Nanotechnology, Xidian University, Xi'an 710071, China

Received:2013-11-30 Revised:2014-01-23 Online:2014-08-15 Published:2014-08-15
Contact: Ma Xiao-Hua E-mail:xhma@xidian.edu.cn
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61334002), the Opening Project of Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory (Grant No. ZHD201206), and the Program for New Century Excellent Talents in University (Grant No. NCET-12-0915).

摘要/Abstract

摘要： In this paper, a new current expression based on both the direct currect (DC) characteristics of the AlGaN/GaN high election mobility transistor (HEMT) and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the AlGaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of I-V, S-parameter, and radio frequency (RF) large-signal characteristics are compared for a self-developed on-wafer AlGaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-μm wide (Such an AlGaN/GaN HEMT is denoted as AlGaN/GaN HEMT (10× 125 μm)). The improved large signal model simulates the I-V characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data.

关键词: AlGaN/GaN HEMT, kink effect, tanh, EEHEMT model

Abstract: In this paper, a new current expression based on both the direct currect (DC) characteristics of the AlGaN/GaN high election mobility transistor (HEMT) and the hyperbolic tangent function tanh is proposed, by which we can describe the kink effect of the AlGaN/GaN HEMT well. Then, an improved EEHEMT model including the proposed current expression is presented. The simulated and measured results of I-V, S-parameter, and radio frequency (RF) large-signal characteristics are compared for a self-developed on-wafer AlGaN/GaN HEMT with ten gate fingers each being 0.4-μm long and 125-μm wide (Such an AlGaN/GaN HEMT is denoted as AlGaN/GaN HEMT (10× 125 μm)). The improved large signal model simulates the I-V characteristic much more accurately than the original one, and its transconductance and RF characteristics are also in excellent agreement with the measured data.

Key words: AlGaN/GaN HEMT, kink effect, tanh, EEHEMT model

中图分类号: (High-field and nonlinear effects)

72.20.Ht

73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.61.Ey (III-V semiconductors)

曹梦逸, 卢阳, 魏家行, 陈永和, 李卫军, 郑佳欣, 马晓华, 郝跃. An improved EEHEMT model for kink effect on AlGaN/GaN HEMT[J]. , 2014, 23(8): 87201-087201.

Cao Meng-Yi (曹梦逸), Lu Yang (卢阳), Wei Jia-Xing (魏家行), Chen Yong-He (陈永和), Li Wei-Jun (李卫军), Zheng Jia-Xin (郑佳欣), Ma Xiao-Hua (马晓华), Hao Yue (郝跃). An improved EEHEMT model for kink effect on AlGaN/GaN HEMT[J]. Chin. Phys. B, 2014, 23(8): 87201-087201.

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An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

An improved EEHEMT model for kink effect on AlGaN/GaN HEMT

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