A novel solution-based self-assembly approach to preparing ultralong titanyl phthalocyanine sub-micron wires

doi:10.1088/1674-1056/23/7/077202

中国物理B ›› 2014, Vol. 23 ›› Issue (7): 77202-077202.doi: 10.1088/1674-1056/23/7/077202

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

A novel solution-based self-assembly approach to preparing ultralong titanyl phthalocyanine sub-micron wires

朱宗鹏^{a b}, 魏斌^b, 张建华^b, 王军^b

a School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China;
b Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China

收稿日期:2013-09-21 修回日期:2013-12-08 出版日期:2014-07-15 发布日期:2014-07-15
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 61176021) and the Innovation Group Project from Shanghai Education Commission, China.

A novel solution-based self-assembly approach to preparing ultralong titanyl phthalocyanine sub-micron wires

Zhu Zong-Peng (朱宗鹏)^{a b}, Wei Bin (魏斌)^b, Zhang Jian-Hua (张建华)^b, Wang Jun (王军)^b

a School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China;
b Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai University, Shanghai 200072, China

Received:2013-09-21 Revised:2013-12-08 Online:2014-07-15 Published:2014-07-15
Contact: Wang Jun E-mail:wangj@shu.edu.cn
About author:72.80.Le; 81.16.Dn; 73.40.Qv
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 61176021) and the Innovation Group Project from Shanghai Education Commission, China.

摘要/Abstract

摘要： Ultralong titanyl phthalocyanine (TiOPc) sub-micron wires have been synthesized by a novel solution-based self-assembly method. By using different solvents, changing the mass concentration and the solvent vapor pressure, the length and the shape of the wires can be adjusted. The mixed-phase properties of the TiOPc sub-micron wires were investigated by the ultraviolet-visible (UV-vis) absorption spectrum and X-ray diffraction. Organic transistors based on these wires were studied, which show the typical p-channel characteristics.

关键词: titanyl phthalocyanine, sub-micron wire, transistor, solution method

Abstract: Ultralong titanyl phthalocyanine (TiOPc) sub-micron wires have been synthesized by a novel solution-based self-assembly method. By using different solvents, changing the mass concentration and the solvent vapor pressure, the length and the shape of the wires can be adjusted. The mixed-phase properties of the TiOPc sub-micron wires were investigated by the ultraviolet-visible (UV-vis) absorption spectrum and X-ray diffraction. Organic transistors based on these wires were studied, which show the typical p-channel characteristics.

Key words: titanyl phthalocyanine, sub-micron wire, transistor, solution method

中图分类号: (Polymers; organic compounds (including organic semiconductors))

72.80.Le

81.16.Dn (Self-assembly) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

朱宗鹏, 魏斌, 张建华, 王军. A novel solution-based self-assembly approach to preparing ultralong titanyl phthalocyanine sub-micron wires[J]. 中国物理B, 2014, 23(7): 77202-077202.

Zhu Zong-Peng (朱宗鹏), Wei Bin (魏斌), Zhang Jian-Hua (张建华), Wang Jun (王军). A novel solution-based self-assembly approach to preparing ultralong titanyl phthalocyanine sub-micron wires[J]. Chin. Phys. B, 2014, 23(7): 77202-077202.

参考文献 25

[1]	Briseno A L, Mannsfeld S C B, Reese C, Hancock J M, Xiong Y, Jenekhe S A, Bao Z N and Xia Y N 2007 Nano Lett. 7 2847
[2]	Tang Q X, Li H X, He M, Hu W P, Liu C M, Chen K Q, Wang C, Liu Y Q and Zhu D B 2006 Adv. Mater. 18 65
[3]	Li J, Zhang Y L, To S, You L D and Sun Y 2011 ACS Nano 5 6661
[4]	Yu H Z and Peng J B 2008 Chin. Phys. Lett. 25 1411
[5]	Zhao Y S, Fu H, Peng A D and Yao J 2007 Adv. Mater. 19 3554
[6]	Zhang J F and Wu F M 1999 Chin. Phys. 8 326
[7]	Briseno A L, Mannsfeld S C B, Lu X M, Xiong Y J, Jenekhe S A, Bao Z N and Xia Y N 2007 Nano Lett. 7 668
[8]	Shen C M, Yang T Z and Xiao C W 2008 Chin. Phys. B 17 2191
[9]	Bradley K, Gabriel J C P and Gruner G 2003 Nano Lett. 3 1353
[10]	Jiang Y H, Liu L W, Yang K, Xiao W D and Gao H J 2011 Chin. Phys. B 20 096401
[11]	Payne M M, Parkin S R, Anthony J E, Kuo C C and Jackson T N 2005 J. Am. Chem. Soc. 127 4986
[12]	Che Y K, Datar A, Balakrishnan K and Zang L 2007 J. Am. Chem. Soc. 129 7234
[13]	Sheraw C D, Jackson T N, Eaton D L and Anthony J E 2003 Adv. Mater. 15 2009
[14]	O'Flaherty S M, Hold S V, Cook M J, Torres T, Chen Y, Hanack M and Blau W J 2003 Adv. Mater. 15 19
[15]	Li L Q, Tang Q X, Li H X, Yang X D, Hu W P, Song Y B, Shuai Z G, Xu W, Liu Y Q and Zhu D B 2007 Adv. Mater. 19 2613
[16]	Conboy J C, Olson E J C, Adams D M, Kerimo J, Zaban A, Gregg B A and Barbara P F 1998 J. Phys. Chem. B 102 4516
[17]	Brinkmann M, Wittmann J C, Barthel M, Hanack M and Chaumont C 2002 Chem. Mater. 14 904
[18]	Ji Z Y, Liu M, Shang L W, Hu W P, Liu G, Liu X H and Wang H 2009 J. Mater. Chem. 5507
[19]	Grzelczak M, Vermant J, Furst E M and Liz-Marzan L M 2010 ACS Nano 4 3591
[20]	Lever A B P 1965 Advances in Inorganic Chemistry and Radiochmistry (New York: Academic) p. 27
[21]	Mizuguchi J, Rihs G and Karfunkel H R 1995 J. Phys. Chem. 99 16217
[22]	Simon J and Andre J J 1985 Molecular Semiconductors (Berlin: Academic)
[23]	Saito T, Sisk W, Kobayashi T, Suzuki S and Iwayanagi T 1993 J. Phys. Chem. 97 8026
[24]	Yamashita A, Maruno T and Hayashi T 1994 J. Phys. Chem. 98 12695
[25]	Liu C J, Wang S Y, Hsieh J C and Ju Y H 2000 Sensor. Actuat. B 65 371

A novel solution-based self-assembly approach to preparing ultralong titanyl phthalocyanine sub-micron wires

A novel solution-based self-assembly approach to preparing ultralong titanyl phthalocyanine sub-micron wires

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