›› 2014, Vol. 23 ›› Issue (7): 77201-077201.doi: 10.1088/1674-1056/23/7/077201
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
陈思哲, 盛况
Chen Si-Zhe (陈思哲), Sheng Kuang (盛况)
摘要: We present the design consideration and fabrication of 4H-SiC trenched-and-implanted vertical junction field-effect transistors (TI-VJFETs). Different design factors, including channel width, channel doping, and mesa height, are considered and evaluated by numerical simulations. Based on the simulation result, normally-on and normally-off devices are fabricated. The fabricated device has a 12 μm thick drift layer with 8× 1015 cm-3 N-type doping and 2.6 μm channel length. The normally-on device shows a 1.2 kV blocking capability with a minimum on-state resistance of 2.33 mΩ · cm2, while the normally-off device shows an on-state resistance of 3.85 mΩ ·cm2. Both the on-state and the blocking performances of the device are close to the state-of-the-art values in this voltage range.
中图分类号: (III-V and II-VI semiconductors)