中国物理B ›› 2013, Vol. 22 ›› Issue (2): 24212-024212.doi: 10.1088/1674-1056/22/2/024212
• ELECTROMAGNETISM, OPTICS, ACOUSTICS, HEAT TRANSFER, CLASSICAL MECHANICS, AND FLUID DYNAMICS • 上一篇 下一篇
仇超a b c, 盛振a, 李乐b, 彭树根b, 武爱民a, 王曦a, 邹世昌a b, 甘甫烷a
Qiu Chao (仇超)a b c, Sheng Zhen (盛振)a, Li Le (李乐)b, Albert Pang (彭树根)b, Wu Ai-Min (武爱民)a, Wang Xi (王曦)a, Zou Shi-Chang (邹世昌)a b, Gan Fu-Wan (甘甫烷)a
摘要: Grating couplers are widely investigated as coupling interfaces between silicon-on-insulator waveguides and optical fibers. In this work, a high-efficiency and complementary metal-oxide-semiconductor (CMOS) process compatible grating coupler is proposed. The poly-Si layer used as gate in CMOS metal-oxide-semiconductor field effect transistor (MOSFET) is combined with a normal fully etched grating coupler, which greatly enhances its coupling efficiency. With optimal structure parameters, a coupling efficiency can reach as high as ~ 70% at a wavelength of 1550 nm as indicated by simulation. From the angle of fabrication, all masks and etching steps are shared between MOSFETs and grating couplers, thereby making the high performance grating couplers easily integrated with CMOS circuits. Fabrication errors such as alignment shift are also simulated, showing that the device is quite tolerant in fabrication.
中图分类号: (Integrated optics)