A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO2/Si stacked MOSFETs

doi:10.1088/1674-1056/21/10/107306

中国物理B ›› 2012, Vol. 21 ›› Issue (10): 107306-107306.doi: 10.1088/1674-1056/21/10/107306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO₂/Si stacked MOSFETs

马飞, 刘红侠, 樊继斌, 王树龙

Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Material and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2012-01-06 修回日期:2012-05-15 出版日期:2012-09-01 发布日期:2012-09-01
基金资助:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60936005 and 61076097), the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083), and the Fundamental Research Funds for the Central Universities (Grant No. 20110203110012).

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO₂/Si stacked MOSFETs

Ma Fei (马飞), Liu Hong-Xia (刘红侠), Fan Ji-Bin (樊继斌), Wang Shu-Long (王树龙)

Key Laboratory of the Ministry of Education for Wide Band-Gap Semiconductor Material and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2012-01-06 Revised:2012-05-15 Online:2012-09-01 Published:2012-09-01
Contact: Ma Fei E-mail:flyinghorse-100@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant Nos. 60936005 and 61076097), the Cultivation Fund of the Key Scientific and Technical Innovation Project, Ministry of Education of China (Grant No. 708083), and the Fundamental Research Funds for the Central Universities (Grant No. 20110203110012).

摘要/Abstract

摘要： In this paper the influences of the metal-gate and high-k/SiO₂/Si stacked structure on the metal-oxide-semiconductor field-effect transistor (MOSFET) are investigated. The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation. The two-dimensional Poisson's equation of potential distribution is presented. A threshold voltage analytical model for metal-gate/high-k/SiO₂/Si stacked MOSFETs is developed by solving these Poisson's equations using the boundary conditions. The model is verified by a two-dimensional device simulator, which provides the basic design guidance for metal-gate/high-k/SiO₂/Si stacked MOSFETs.

关键词: metal-gate, high-k, work function, flat-band voltage, threshold voltage, metal-oxide-semiconductor field-effect transistor

Abstract: In this paper the influences of the metal-gate and high-k/SiO₂/Si stacked structure on the metal-oxide-semiconductor field-effect transistor (MOSFET) are investigated. The flat-band voltage is revised by considering the influences of stacked structure and metal-semiconductor work function fluctuation. The two-dimensional Poisson's equation of potential distribution is presented. A threshold voltage analytical model for metal-gate/high-k/SiO₂/Si stacked MOSFETs is developed by solving these Poisson's equations using the boundary conditions. The model is verified by a two-dimensional device simulator, which provides the basic design guidance for metal-gate/high-k/SiO₂/Si stacked MOSFETs.

Key words: metal-gate, high-k, work function, flat-band voltage, threshold voltage, metal-oxide-semiconductor field-effect transistor

中图分类号: (Metal-insulator-semiconductor structures (including semiconductor-to-insulator))

73.40.Qv

73.40.Ns (Metal-nonmetal contacts) 73.30.+y (Surface double layers, Schottky barriers, and work functions)

马飞, 刘红侠, 樊继斌, 王树龙. A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO₂/Si stacked MOSFETs[J]. 中国物理B, 2012, 21(10): 107306-107306.

Ma Fei (马飞), Liu Hong-Xia (刘红侠), Fan Ji-Bin (樊继斌), Wang Shu-Long (王树龙). A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO₂/Si stacked MOSFETs[J]. Chin. Phys. B, 2012, 21(10): 107306-107306.

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A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO₂/Si stacked MOSFETs

A two-dimensional threshold voltage analytical model for metal-gate/high-k/SiO₂/Si stacked MOSFETs

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