A two-dimensional threshold voltage analytical model for metal-gate/high- k/SiO 2/Si stacked MOSFETs
马飞, 刘红侠, 樊继斌, 王树龙
A two-dimensional threshold voltage analytical model for metal-gate/high- k/SiO 2/Si stacked MOSFETs
Ma Fei (马飞), Liu Hong-Xia (刘红侠), Fan Ji-Bin (樊继斌), Wang Shu-Long (王树龙)
中国物理B . 2012, (10): 107306 -107306 .  DOI: 10.1088/1674-1056/21/10/107306