中国物理B ›› 2012, Vol. 21 ›› Issue (7): 77103-077103.doi: 10.1088/1674-1056/21/7/077103

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer

张伟, 薛军帅, 周晓伟, 张月, 刘子阳, 张进成, 郝跃   

  1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2011-12-06 修回日期:2012-01-09 出版日期:2012-06-01 发布日期:2012-06-01
  • 基金资助:
    Project supported by the National Key Science & Technology Special Project of China (Grant No. 2008ZX01002-002) and the Major Program and State Key Program of National Natural Science Foundation of China (Grant No. 60890191).

Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer

Zhang Wei(张伟)†, Xue Jun-Shuai(薛军帅), Zhou Xiao-Wei (周晓伟), Zhang Yue(张月), Liu Zi-Yang(刘子阳), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃)   

  1. Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2011-12-06 Revised:2012-01-09 Online:2012-06-01 Published:2012-06-01
  • Contact: Zhang Wei E-mail:zwxidian@mail.xidian.edu.cn
  • Supported by:
    Project supported by the National Key Science & Technology Special Project of China (Grant No. 2008ZX01002-002) and the Major Program and State Key Program of National Natural Science Foundation of China (Grant No. 60890191).

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摘要： AlGaN/GaN superlattice grown on the top of GaN buffer induces the broadening of the full width at half maximum of (102) and (002) x-ray diffraction rocking curves. With the increase of Si-doped concentration in GaN wells, the full width at half maximum of the (102) rocking curves decreases, while that of the (002) rocking curves increases. Significant increase of the full width at half maximum of the (002) rocking curves when the doping concentration reaches 2.5?1019 cm-3 indicates the substantial increase of the inclined threading dislocation. High level doping in the AlGaN/GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it.

关键词: AlGaN/GaN, superlattice, Si doping

Abstract: AlGaN/GaN superlattice grown on the top of GaN buffer induces the broadening of the full width at half maximum of (102) and (002) x-ray diffraction rocking curves. With the increase of Si-doped concentration in GaN wells, the full width at half maximum of the (102) rocking curves decreases, while that of the (002) rocking curves increases. Significant increase of the full width at half maximum of the (002) rocking curves when the doping concentration reaches 2.5?1019 cm-3 indicates the substantial increase of the inclined threading dislocation. High level doping in the AlGaN/GaN superlattice can greatly reduce the biaxial stress and optimize the surface roughness of the structures grown on the top of it.

Key words: AlGaN/GaN, superlattice, Si doping

中图分类号:  (III-V semiconductors)

  • 71.55.Eq
68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 68.65.Cd (Superlattices)