Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer
张伟, 薛军帅, 周晓伟, 张月, 刘子阳, 张进成, 郝跃
Effect of Si doping in wells of AlGaN/GaN superlattice on the characteristics of epitaxial layer
Zhang Wei(张伟), Xue Jun-Shuai(薛军帅), Zhou Xiao-Wei (周晓伟), Zhang Yue(张月), Liu Zi-Yang(刘子阳), Zhang Jin-Cheng(张进成), and Hao Yue(郝跃)
中国物理B
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2012, (7): 77103
-077103
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DOI: 10.1088/1674-1056/21/7/077103