中国物理B ›› 2023, Vol. 32 ›› Issue (3): 38503-038503.doi: 10.1088/1674-1056/acaa2e

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High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices

Junkai Jiang(蒋俊锴)1,2, Faran Chang(常发冉)1, Wenguang Zhou(周文广)1, Nong Li(李农)1, Weiqiang Chen(陈伟强)1, Dongwei Jiang(蒋洞微)1,2,3, Hongyue Hao(郝宏玥)1,2,3, Guowei Wang(王国伟)1,2,3,†, Donghai Wu(吴东海)1,2,3, Yingqiang Xu(徐应强)1,2,3, and Zhi-Chuan Niu(牛智川)1,2,3,‡   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China;
    3 Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • 收稿日期:2022-11-02 修回日期:2022-12-03 接受日期:2022-12-09 出版日期:2023-02-14 发布日期:2023-02-21
  • 通讯作者: Guowei Wang, Zhi-Chuan Niu E-mail:wangguowei@semi.ac.cn;zcniu@semi.ac.cn
  • 基金资助:
    Project supported by the National Key Technologies R&D Program of China (Grant Nos. 2019YFA0705203 and 2018YFA0209104), Major Program of the National Natural Science Foundation of China (Grant No. 61790581), and Aeronautical Science Foundation of China (Grant No. 20182436004).

High-performance extended short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices

Junkai Jiang(蒋俊锴)1,2, Faran Chang(常发冉)1, Wenguang Zhou(周文广)1, Nong Li(李农)1, Weiqiang Chen(陈伟强)1, Dongwei Jiang(蒋洞微)1,2,3, Hongyue Hao(郝宏玥)1,2,3, Guowei Wang(王国伟)1,2,3,†, Donghai Wu(吴东海)1,2,3, Yingqiang Xu(徐应强)1,2,3, and Zhi-Chuan Niu(牛智川)1,2,3,‡   

  1. 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;
    2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 101408, China;
    3 Center of Materials Science and Optoelectronics Engineering, College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China
  • Received:2022-11-02 Revised:2022-12-03 Accepted:2022-12-09 Online:2023-02-14 Published:2023-02-21
  • Contact: Guowei Wang, Zhi-Chuan Niu E-mail:wangguowei@semi.ac.cn;zcniu@semi.ac.cn
  • Supported by:
    Project supported by the National Key Technologies R&D Program of China (Grant Nos. 2019YFA0705203 and 2018YFA0209104), Major Program of the National Natural Science Foundation of China (Grant No. 61790581), and Aeronautical Science Foundation of China (Grant No. 20182436004).

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摘要： High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated. At 300 K, the device exhibits a 50% cut-off wavelength of $\sim 2.1 $μm as predicted from the band structure calculation; the device responsivity peaks at 0.85 A/W, corresponding to a quantum efficiency (QE) of 56% for 2.0 μm-thick absorption region. The dark current density of 1.03$ \times 10^{-3}$ A/cm$^{2}$ is obtained under 50 mV applied bias. The device exhibits a saturated dark current shot noise limited specific detectivity ($D^{\ast }$) of 3.29$\times10^{10}$cm$\cdot$Hz$^{1/2}$/W (at a peak responsivity of 2.0 μm) under $-50$ mV applied bias.

关键词: photodetectors, infrared, superlattices

Abstract: High performance short-wavelength infrared PBn photodetectors based on InAs/GaSb/AlSb superlattices on GaSb substrate have been demonstrated. At 300 K, the device exhibits a 50% cut-off wavelength of $\sim 2.1 $μm as predicted from the band structure calculation; the device responsivity peaks at 0.85 A/W, corresponding to a quantum efficiency (QE) of 56% for 2.0 μm-thick absorption region. The dark current density of 1.03$ \times 10^{-3}$ A/cm$^{2}$ is obtained under 50 mV applied bias. The device exhibits a saturated dark current shot noise limited specific detectivity ($D^{\ast }$) of 3.29$\times10^{10}$cm$\cdot$Hz$^{1/2}$/W (at a peak responsivity of 2.0 μm) under $-50$ mV applied bias.

Key words: photodetectors, infrared, superlattices

中图分类号:  (Photodetectors (including infrared and CCD detectors))

  • 85.60.Gz
87.64.km (Infrared) 73.21.Cd (Superlattices)