Recovery of single event upset in advanced complementary metal–oxide semiconductor static random access memory cells

doi:10.1088/1674-1056/21/2/029401

中国物理B ›› 2012, Vol. 21 ›› Issue (2): 29401-029401.doi: 10.1088/1674-1056/21/2/029401

• GEOPHYSICS, ASTRONOMY, AND ASTROPHYSICS • 上一篇

秦军瑞,陈书明,梁斌,刘必慰

收稿日期:2011-07-07 修回日期:2011-09-19 出版日期:2012-01-30 发布日期:2012-01-30
通讯作者: 秦军瑞,qinjr@nudt.edu.cn E-mail:qinjr@nudt.edu.cn

Recovery of single event upset in advanced complementary metal–oxide semiconductor static random access memory cells

Qin Jun-Rui(秦军瑞)^†, Chen Shu-Ming(陈书明), Liang Bin(梁斌), and Liu Bi-Wei(刘必慰)

College of Computer, National University of Defense Technology, Changsha 410073, China

Received:2011-07-07 Revised:2011-09-19 Online:2012-01-30 Published:2012-01-30
Contact: Qin Jun-Rui,qinjr@nudt.edu.cn E-mail:qinjr@nudt.edu.cn
Supported by:
Project supported by the State Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and the National Natural Science Foundation of China (Grant Nos. 61076025 and 61006070).

摘要/Abstract

Abstract: Using computer-aided design three-dimensional (3D) simulation technology, the recovery mechanism of single event upset and the effects of spacing and hit angle on the recovery are studied. It is found that the multi-node charge collection plays a key role in recovery and shielding the charge sharing by adding guard rings. It cannot exhibit the recovery effect. It is also indicated that the upset linear energy transfer (LET) threshold is kept constant while the recovery LET threshold increases as the spacing increases. Additionally, the effect of incident angle on recovery is analysed and it is shown that a larger angle can bring about a stronger charge sharing effect, thus strengthening the recovery ability.

Key words: single event upset, multi-node charge collection, static random access memory, angular dependence

中图分类号: (Radiation processes)

94.05.Dd

85.30.Tv (Field effect devices) 02.60.Cb (Numerical simulation; solution of equations)

秦军瑞,陈书明,梁斌,刘必慰. [J]. 中国物理B, 2012, 21(2): 29401-029401.

Qin Jun-Rui(秦军瑞), Chen Shu-Ming(陈书明), Liang Bin(梁斌), and Liu Bi-Wei(刘必慰) . Recovery of single event upset in advanced complementary metal–oxide semiconductor static random access memory cells[J]. Chin. Phys. B, 2012, 21(2): 29401-029401.

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Recovery of single event upset in advanced complementary metal–oxide semiconductor static random access memory cells

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