中国物理B ›› 2012, Vol. 21 ›› Issue (2): 27803-027803.doi: 10.1088/1674-1056/21/2/027803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

薛晓咏,许晟瑞,张进成,林志宇,马俊彩,刘子扬,薛军帅,郝跃   

  • 收稿日期:2011-06-29 修回日期:2011-07-22 出版日期:2012-01-30 发布日期:2012-01-30
  • 通讯作者: 薛晓咏,isaac7777777@163.com E-mail:isaac7777777@163.com

Temperature dependences of Raman scattering in different types of GaN epilayers

Xue Xiao-Yong(薛晓咏), Xu Sheng-Rui(许晟瑞), Zhang Jin-Cheng(张进成), Lin Zhi-Yu(林志宇), Ma Jun-Cai(马俊彩), Liu Zi-Yang(刘子扬), Xue Jun-Shuai(薛军帅), and Hao Yue(郝跃)   

  1. Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi醤 710071, China
  • Received:2011-06-29 Revised:2011-07-22 Online:2012-01-30 Published:2012-01-30
  • Contact: Xue Xiao-Yong,isaac7777777@163.com E-mail:isaac7777777@163.com
  • Supported by:
    Project supported by the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002), the Fundamental Research Funds for the Central Universities (Grant No. JY10000904009), and the Major Program and State Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033).

Abstract: First-order Raman scatterings of hexagonal GaN layers deposited by the hydride vapour phase epitaxy and by metal-organic chemical vapour deposition on SiC and sapphire substrates are studied in a temperature range between 303 K and 503 K. The temperature dependences of two GaN Raman modes (A1 (LO) and E2 (high)) are obtained. We focus our attention on the temperature dependence of E2 (high) mode and find that for different types of GaN epilayers their temperature dependences are somewhat different. We compare their differences and give them an explanation. The simplified formulas we obtained are in good accordance with experiment data. The results can be used to determine the temperature of a GaN sample.

Key words: GaN, Raman scattering, temperature dependence

中图分类号:  (III-V semiconductors)

  • 78.55.Cr
81.15.Kk (Vapor phase epitaxy; growth from vapor phase)