Structural and optical investigation of nonpolar α-plane GaN grown by metal–organic chemical vapour deposition on r-plane sapphire by neutron irradiation

doi:10.1088/1674-1056/21/2/027802

中国物理B ›› 2012, Vol. 21 ›› Issue (2): 27802-027802.doi: 10.1088/1674-1056/21/2/027802

许晟瑞,张金风,谷文萍,郝跃,张进成,周小伟,林志宇,毛维

收稿日期:2011-06-16 修回日期:2011-07-12 出版日期:2012-01-30 发布日期:2012-01-30
通讯作者: 许晟瑞,shengruixidian@126.com E-mail:shengruixidian@126.com

Structural and optical investigation of nonpolar α-plane GaN grown by metal–organic chemical vapour deposition on r-plane sapphire by neutron irradiation

Xu Sheng-Rui(许晟瑞)^†, Zhang Jin-Feng(张金风), Gu Wen-Ping(谷文萍), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), Zhou Xiao-Wei(周小伟), Lin Zhi-Yu(林志宇), and Mao Wei(毛维)

National Key Laboratory of Fundamental Science for Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2011-06-16 Revised:2011-07-12 Online:2012-01-30 Published:2012-01-30
Contact: Xu Sheng-Rui,shengruixidian@126.com E-mail:shengruixidian@126.com
Supported by:
Project supported by the National Key Science and Technology Special Project, China (Grant No. 2008ZX01002-002), the Major Program and State Key Program of the National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033), and the Fundamental Research Funds for the Central Universities, China (Grant No. JY10000904009).

摘要/Abstract

Abstract: Nonpolar (11$\bar{2}$0) α-plane GaN films are grown by metal-organic chemical vapour deposition (MOCVD) on r-plane (1$\bar{1}$02) sapphire. The samples are irradiated with neutrons under a dose of 1$\times$10¹⁵ cm^-2. The surface morphology, the crystal defects and the optical properties of the samples before and after irradiation are analysed using atomic force microscopy (AFM), high resolution X-ray diffraction (HRXRD) and photoluminescence (PL). The AFM result shows deteriorated sample surface after the irradiation. Careful fitting of the XRD rocking curve is carried out to obtain the Lorentzian weight fraction. Broadening due to Lorentzian type is more obvious in the as-grown sample compared with that of the irradiated sample, indicating that more point defects appear in the irradiated sample. The variations of line width and intensity of the PL band edge emission peak are consistent with the XRD results. The activation energy decreases from 82.5 meV to 29.9 meV after irradiation by neutron.

Key words: GaN, neutron, nonpolar, photoluminescence

中图分类号: (III-V semiconductors)

78.55.Cr

73.61.Ey (III-V semiconductors)

许晟瑞, 张金风, 谷文萍, 郝跃, 张进成, 周小伟, 林志宇, 毛维. [J]. 中国物理B, 2012, 21(2): 27802-027802.

Xu Sheng-Rui(许晟瑞), Zhang Jin-Feng(张金风), Gu Wen-Ping(谷文萍), Hao Yue(郝跃), Zhang Jin-Cheng(张进成), Zhou Xiao-Wei(周小伟), Lin Zhi-Yu(林志宇), and Mao Wei(毛维) . Structural and optical investigation of nonpolar α-plane GaN grown by metal–organic chemical vapour deposition on r-plane sapphire by neutron irradiation[J]. Chin. Phys. B, 2012, 21(2): 27802-027802.

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Structural and optical investigation of nonpolar α-plane GaN grown by metal–organic chemical vapour deposition on r-plane sapphire by neutron irradiation

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