Temperature dependences of Raman scattering in different types of GaN epilayers

doi:10.1088/1674-1056/21/2/027803

中国物理B ›› 2012, Vol. 21 ›› Issue (2): 27803-027803.doi: 10.1088/1674-1056/21/2/027803

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

薛晓咏,许晟瑞,张进成,林志宇,马俊彩,刘子扬,薛军帅,郝跃

收稿日期:2011-06-29 修回日期:2011-07-22 出版日期:2012-01-30 发布日期:2012-01-30
通讯作者: 薛晓咏,isaac7777777@163.com E-mail:isaac7777777@163.com

Temperature dependences of Raman scattering in different types of GaN epilayers

Xue Xiao-Yong(薛晓咏)^†, Xu Sheng-Rui(许晟瑞), Zhang Jin-Cheng(张进成), Lin Zhi-Yu(林志宇), Ma Jun-Cai(马俊彩), Liu Zi-Yang(刘子扬), Xue Jun-Shuai(薛军帅), and Hao Yue(郝跃)

Key Laboratory of Wide Band-Gap Semiconductor Technology, School of Microelectronics, Xidian University, Xi醤 710071, China

Received:2011-06-29 Revised:2011-07-22 Online:2012-01-30 Published:2012-01-30
Contact: Xue Xiao-Yong,isaac7777777@163.com E-mail:isaac7777777@163.com
Supported by:
Project supported by the National Key Science & Technology Special Project (Grant No. 2008ZX01002-002), the Fundamental Research Funds for the Central Universities (Grant No. JY10000904009), and the Major Program and State Key Program of National Natural Science Foundation of China (Grant Nos. 60890191 and 60736033).

摘要/Abstract

Abstract: First-order Raman scatterings of hexagonal GaN layers deposited by the hydride vapour phase epitaxy and by metal-organic chemical vapour deposition on SiC and sapphire substrates are studied in a temperature range between 303 K and 503 K. The temperature dependences of two GaN Raman modes (A₁ (LO) and E₂ (high)) are obtained. We focus our attention on the temperature dependence of E₂ (high) mode and find that for different types of GaN epilayers their temperature dependences are somewhat different. We compare their differences and give them an explanation. The simplified formulas we obtained are in good accordance with experiment data. The results can be used to determine the temperature of a GaN sample.

Key words: GaN, Raman scattering, temperature dependence

中图分类号: (III-V semiconductors)

78.55.Cr

81.15.Kk (Vapor phase epitaxy; growth from vapor phase)

薛晓咏,许晟瑞,张进成,林志宇,马俊彩,刘子扬,薛军帅,郝跃. [J]. 中国物理B, 2012, 21(2): 27803-027803.

Xue Xiao-Yong(薛晓咏), Xu Sheng-Rui(许晟瑞), Zhang Jin-Cheng(张进成), Lin Zhi-Yu(林志宇), Ma Jun-Cai(马俊彩), Liu Zi-Yang(刘子扬), Xue Jun-Shuai(薛军帅), and Hao Yue(郝跃) . Temperature dependences of Raman scattering in different types of GaN epilayers[J]. Chin. Phys. B, 2012, 21(2): 27803-027803.

参考文献 22

[1]	Xu S R, Hao Y, Zhang J C, Zhou X W, Cao Y R, Ou X X, Mao W, Du D C and Wang H 2010 Chin. Phys. B 19 107204
[2]	Zhang J F, Xu S R, Zhang J C and Hao Y 2011 Chin. Phys. B 20 057801
[3]	Elhamri S, Saxler A, Mitchel W C, Berney R, Elsass C, Smorchkova Y, Mishra U K, Speck J S, Chowdhury U and Dupuis R D 2003 J. Appl. Phys. 93 1079
[4]	Higashiwaki M, Matsui T and Mimura T 2006 IEEE Electron Device Lett. 27 16
[5]	Quan S, Hao Y, Ma X H and Yu H Y 2011 Chin. Phys. B 20 018101
[6]	Thomas E Beechem III 2008 Ph. D. dissertation “Metrology of GaN Electronics using Micro-Raman Spectroscopy” Atlanta Georgia Institute of Technology, USA
[7]	Link A, Bitzer K, Limmer W, Sauer R, Kirchner C, Schwegler V, Kamp M, Ebling D G and Benz K W 1999 J. Appl. Phys. 86 6256
[8]	Giehler M, Ramsteiner M and Waltereit P 2001 J. Appl. Phys. 89 3634
[9]	Li W S, Shen Z X, Feng Z C and Chua S J 2000 J. Appl. Phys. 87 3332
[10]	Song D Y, Basavaraj M, Nikishin S A and Holtz M 2006 J. Appl. Phys. 100 3332
[11]	Ahmad I, Kasisomayajula V, Song D Y, Tian L, Berg J M and Holtz M 2006 J. Appl. Phys. 100 113718
[12]	Harima H 2002 J. Phys.: Condens. Matter 14 R967
[13]	Hushur A, Manghnani M H and Narayan J 2009 J. Appl. Phys. 106 054317
[14]	Irmer G, Wenzel M and Monecke J 1996 Phys. Status Solidi B 195 85
[15]	Menéndez J and Cardona M 1984 Phys. Rev. B 29 2051
[16]	Balkanski M, Wallis R F and Haro E 1983 Phys. Rev. B 28 1928
[17]	Perlin P, Carillon C J, Itie J P, Miguel A S, Grzegory I and Polian A 1992 Phys. Rev. B 45 83
[18]	Kim K, Lambrecht W R L and Segall B 1996 Phys. Rev. B 53 16310
[19]	Miwa K and Fukumoto A 1993 Phys. Rev. B 48 7897
[20]	Kisielowski C, Krüger J, Ruvimov S, Suski T, Ager III J W, Jones E, Weber Z L, Rubin M and Weber E R 1996 Phys. Rev. B 54 17745
[21]	Morkoc H, Strite S, Gao G B, Lin M E, Sverdlov B and Burns M 1994 J. Appl. Phys. 76 1363
[22]	Lladó E A, Dolmanan S B, Lin V K X, Teo S L, Dadgar A, Krost A and Tripathy S 2010 J. Appl. Phys. 108 114501

Temperature dependences of Raman scattering in different types of GaN epilayers

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献 22

相关文章 15

Metrics

本文评价

推荐阅读 0

[1]	Xue-Fei Li(李雪飞), Wen-Xian Yang(杨文献), Jun-Hua Long(龙军华), Ming Tan(谭明), Shan Jin(金山), Dong-Ying Wu(吴栋颖), Yuan-Yuan Wu(吴渊渊), and Shu-Long Lu(陆书龙). Electroluminescence explored internal behavior of carriers in InGaAsP single-junction solar cell[J]. 中国物理B, 2023, 32(1): 17801-017801.
[2]	Chen Yue(岳琛), Xian-Sheng Tang(唐先胜), Yang-Feng Li(李阳锋), Wen-Qi Wang(王文奇), Xin-Xin Li(李欣欣), Jun-Yang Zhang(张珺玚), Zhen Deng(邓震), Chun-Hua Du(杜春花), Hai-Qiang Jia(贾海强), Wen-Xin Wang(王文新), Wei Lu(陆卫), Yang Jiang(江洋), and Hong Chen(陈弘). Enhanced absorption process in the thin active region of GaAs based p-i-n structure[J]. 中国物理B, 2021, 30(9): 97803-097803.
[3]	Yi Zhang(张一), Cheng-Ao Yang(杨成奥), Jin-Ming Shang(尚金铭), Yi-Hang Chen(陈益航), Tian-Fang Wang(王天放), Yu Zhang(张宇), Ying-Qiang Xu(徐应强), Bing Liu(刘冰), and Zhi-Chuan Niu(牛智川). GaSb-based type-I quantum well cascade diode lasers emitting at nearly 2-μm wavelength with digitally grown AlGaAsSb gradient layers[J]. 中国物理B, 2021, 30(9): 94204-094204.
[4]	余丁, 沈桂英, 谢辉, 刘京明, 孙静, 赵有文. Mechanism of free electron concentration saturation phenomenon in Te-GaSb single crystal[J]. 中国物理B, 2019, 28(5): 57102-057102.
[5]	李妍, 桑新柱. Mid-infrared supercontinuum generation and its application on all-optical quantization with different input pulses[J]. 中国物理B, 2019, 28(5): 54206-054206.
[6]	尚金铭, 冯健, 杨成奥, 谢圣文, 张一, 佟存柱, 张宇, 牛智川. High quality 2-μm GaSb-based optically pumped semiconductor disk laser grown by molecular beam epitaxy[J]. 中国物理B, 2019, 28(3): 34202-034202.
[7]	谢圣文, 张宇, 杨成奥, 黄书山, 袁野, 张一, 尚金铭, 邵福会, 徐应强, 倪海桥, 牛智川. High performance GaSb based digital-grown InGaSb/AlGaAsSb mid-infrared lasers and bars[J]. 中国物理B, 2019, 28(1): 14208-014208.
[8]	刘双韬, 杨静, 赵德刚, 江德生, 梁锋, 陈平, 朱建军, 刘宗顺, 刘炜, 邢瑶, 彭莉媛, 张立群, 王文杰, 李沫. Influence of carrier gas H₂ flow rate on quality of p-type GaN epilayer grown and annealed at lower temperatures[J]. 中国物理B, 2018, 27(12): 127803-127803.
[9]	王海龙, 张晓涵, 王红霞, 黎斌, 陈冲, 李永贤, 颜欢, 吴志盛, 江灏. Suppression of indium-composition fluctuations in InGaN epitaxial layers by periodically-pulsed mixture of N₂ and H₂ carrier gas[J]. 中国物理B, 2018, 27(12): 127805-127805.
[10]	张一, 邵福会, 杨成奥, 谢圣文, 黄书山, 袁野, 尚金铭, 张宇, 徐应强, 倪海桥, 牛智川. Room-temperature continuous-wave interband cascade laser emitting at 3.45 μm[J]. 中国物理B, 2018, 27(12): 124207-124207.
[11]	赵斌, 胡巍, 唐先胜, 霍雯雪, 韩丽丽, 赵明龙, 马紫光, 王文新, 贾海强, 陈弘. Characteristic improvements of thin film AlGaInP red light emitting diodes on a metallic substrate[J]. 中国物理B, 2018, 27(4): 47803-047803.
[12]	唐静, 许秀来. Magneto-optical properties of self-assembled InAs quantum dots for quantum information processing[J]. 中国物理B, 2018, 27(2): 27804-027804.
[13]	刘双韬, 赵德刚, 杨静, 江德生, 梁锋, 陈平, 朱建军, 刘宗顺, 李翔, 刘炜, 邢瑶, 张立群. The residual C concentration control for low temperature growth p-type GaN[J]. 中国物理B, 2017, 26(10): 107102-107102.
[14]	白永彪, 赵有文, 沈桂英, 陈晓玉, 刘京明, 谢晖, 董志远, 杨俊, 杨凤云, 王凤华. N-type GaSb single crystals with high below-band gap transmission[J]. 中国物理B, 2017, 26(10): 107801-107801.
[15]	薛永洲, 陈泽升, 倪海桥, 牛智川, 江德生, 窦秀明, 孙宝权. Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm[J]. 中国物理B, 2017, 26(8): 84202-084202.