New insight into the parasitic bipolar amplification effect in single event transient production

doi:10.1088/1674-1056/21/1/016103

中国物理B ›› 2012, Vol. 21 ›› Issue (1): 16103-016103.doi: 10.1088/1674-1056/21/1/016103

New insight into the parasitic bipolar amplification effect in single event transient production

陈建军, 陈书明, 梁斌, 邓科峰

School of Computer Science, National University of Defense Technology, Changsha 410073, China

收稿日期:2011-05-11 修回日期:2011-07-29 出版日期:2012-01-15 发布日期:2012-01-20
基金资助:
Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025).

New insight into the parasitic bipolar amplification effect in single event transient production

Chen Jian-Jun(陈建军)^†, Chen Shu-Ming(陈书明), Liang Bin(梁斌), and Deng Ke-Feng (邓科峰)

School of Computer Science, National University of Defense Technology, Changsha 410073, China

Received:2011-05-11 Revised:2011-07-29 Online:2012-01-15 Published:2012-01-20
Supported by:
Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 60836004) and the National Natural Science Foundation of China (Grant Nos. 61006070 and 61076025).

摘要/Abstract

摘要： In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P⁺-well layer and can be removed by a buried SO₂ layer.

关键词: parasitic bipolar amplification effect (bipolar effect), single event transient, substrate process

Abstract: In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P⁺-well layer and can be removed by a buried SO₂ layer.

Key words: parasitic bipolar amplification effect (bipolar effect), single event transient, substrate process

中图分类号: (Ion radiation effects)

61.80.Jh

85.30.Tv (Field effect devices) 85.30.Pq (Bipolar transistors)

陈建军, 陈书明, 梁斌, 邓科峰. New insight into the parasitic bipolar amplification effect in single event transient production[J]. 中国物理B, 2012, 21(1): 16103-016103.

Chen Jian-Jun(陈建军), Chen Shu-Ming(陈书明), Liang Bin(梁斌), and Deng Ke-Feng (邓科峰) . New insight into the parasitic bipolar amplification effect in single event transient production[J]. Chin. Phys. B, 2012, 21(1): 16103-016103.

参考文献 12

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New insight into the parasitic bipolar amplification effect in single event transient production

New insight into the parasitic bipolar amplification effect in single event transient production

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