中国物理B ›› 2012, Vol. 21 ›› Issue (1): 16103-016103.doi: 10.1088/1674-1056/21/1/016103
陈建军, 陈书明, 梁斌, 邓科峰
Chen Jian-Jun(陈建军)†, Chen Shu-Ming(陈书明), Liang Bin(梁斌), and Deng Ke-Feng (邓科峰)
摘要: In this paper, a new method is proposed to study the mechanism of charge collection in single event transient (SET) production in 90 nm bulk complementary metal oxide semiconductor (CMOS) technology. We find that different from the case in the pMOSFET, the parasitic bipolar amplification effect (bipolar effect) in the balanced inverter does not exist in the nMOSFET after the ion striking. The influence of the substrate process on the bipolar effect is also studied in the pMOSFET. We find that the bipolar effect can be effectively mitigated by a buried deep P+-well layer and can be removed by a buried SO2 layer.
中图分类号: (Ion radiation effects)