中国物理B ›› 2012, Vol. 21 ›› Issue (1): 16104-016104.doi: 10.1088/1674-1056/21/1/016104

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Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain

陈书明, 陈建军   

  1. School of Computer Science, National University of Defense Technology, Changsha 410073, China
  • 收稿日期:2011-07-29 修回日期:2011-08-23 出版日期:2012-01-15 发布日期:2012-01-20
  • 基金资助:
    Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 60836004).

Temperature dependence of the P-hit single event transient pulse width in a three-transistor inverter chain

Chen Shu-Ming(陈书明) and Chen Jian-Jun(陈建军)†   

  1. School of Computer Science, National University of Defense Technology, Changsha 410073, China
  • Received:2011-07-29 Revised:2011-08-23 Online:2012-01-15 Published:2012-01-20
  • Supported by:
    Project supported by the Key Program of the National Natural Science Foundation of China (Grant No. 60836004).

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摘要： A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure (or similar layout structures) will be a better solution for spaceborne integrated circuit design for extreme environments.

关键词: temperature dependence, single event transient, parasitic bipolar amplification effect, charge sharing collection

Abstract: A comparison of the temperature dependence of the P-hit single event transient (SET) in a two-transistor (2T) inverter with that in a three-transistor (3T) inverter is carried out based on a three-dimensional numerical simulation. Due to the significantly distinct mechanisms of the single event change collection in the 2T and the 3T inverters, the temperature plays different roles in the SET production and propagation. The SET pulse will be significantly broadened in the 2T inverter chain while will be compressed in the 3T inverter chain as temperature increases. The investigation provides a new insight into the SET mitigation under the extreme environment, where both the high temperature and the single event effects should be considered. The 3T inverter layout structure (or similar layout structures) will be a better solution for spaceborne integrated circuit design for extreme environments.

Key words: temperature dependence, single event transient, parasitic bipolar amplification effect, charge sharing collection

中图分类号:  (Ion radiation effects)

  • 61.80.Jh
85.40.-e (Microelectronics: LSI, VLSI, ULSI; integrated circuit fabrication technology) 85.30.Tv (Field effect devices)