A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

doi:10.1088/1674-1056/20/9/098501

中国物理B ›› 2011, Vol. 20 ›› Issue (9): 98501-098501.doi: 10.1088/1674-1056/20/9/098501

• INTERDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇下一篇

A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

徐小波, 徐凯选, 张鹤鸣, 秦珊珊

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

收稿日期:2011-04-01 修回日期:2011-05-09 出版日期:2011-09-15 发布日期:2011-09-15

A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

Xu Xiao-Bo(徐小波)^†, Xu Kai-Xuan(徐凯选), Zhang He-Ming(张鹤鸣), and Qin Shan-Shan(秦珊珊)

Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071, China

Received:2011-04-01 Revised:2011-05-09 Online:2011-09-15 Published:2011-09-15

摘要/Abstract

摘要： In this paper, we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model formulation. The collector injection width, the internal base—collector bias, and the hole density at the base—collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector, as they are different from those of a bulk counterpart.

Abstract: In this paper, we describe the saturation effect of a silicon germanium (SiGe) heterojunction bipolar transistor (HBT) fabricated on a thin silicon-on-insulator (SOI) with a step-by-step derivation of the model formulation. The collector injection width, the internal base—collector bias, and the hole density at the base—collector junction interface are analysed by considering the unique features of the internal and the external parts of the collector, as they are different from those of a bulk counterpart.

Key words: saturation effect, heterojunction bipolar transistor, SiGe, silicon-on-insulator

中图分类号: (Bipolar transistors)

85.30.Pq

85.30.De (Semiconductor-device characterization, design, and modeling) 85.30.-z (Semiconductor devices)

徐小波, 徐凯选, 张鹤鸣, 秦珊珊. A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects[J]. 中国物理B, 2011, 20(9): 98501-098501.

Xu Xiao-Bo(徐小波), Xu Kai-Xuan(徐凯选), Zhang He-Ming(张鹤鸣), and Qin Shan-Shan(秦珊珊) . A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects[J]. Chin. Phys. B, 2011, 20(9): 98501-098501.

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A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

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