A device model for thin silicon-on-insulator SiGe heterojunction bipolar transistors with saturation effects

徐小波, 徐凯选, 张鹤鸣, 秦珊珊

Xu Xiao-Bo(徐小波), Xu Kai-Xuan(徐凯选), Zhang He-Ming(张鹤鸣), and Qin Shan-Shan(秦珊珊)

中国物理B . 2011, (9): 98501 -098501 . DOI: 10.1088/1674-1056/20/9/098501