Two-dimensional analysis of the interface states effects on current gain for 4H－SiC bipolar junction transistor

doi:10.1088/1674-1056/19/6/067102

中国物理B ›› 2010, Vol. 19 ›› Issue (6): 67102-067102.doi: 10.1088/1674-1056/19/6/067102

Two-dimensional analysis of the interface states effects on current gain for 4H－SiC bipolar junction transistor

张有润, 张波, 李肇基, 邓小川

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

收稿日期:2009-09-18 出版日期:2010-06-15 发布日期:2010-06-15

Two-dimensional analysis of the interface states effects on current gain for 4H－SiC bipolar junction transistor

Zhang You-Run(张有润)^†, Zhang Bo(张波), Li Zhao-Ji(李肇基), and Deng Xiao-Chuan(邓小川)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China

Received:2009-09-18 Online:2010-06-15 Published:2010-06-15

摘要/Abstract

摘要： This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H--SiC bipolar junction transistor (BJT). Simulation results indicate the mechanism of current gain degradation, which is surface Fermi level pinning leading to a strong downward bending of the energy bands to form the channel of surface electron recombination current. The experimental results are well-matched with the simulation, which is modeled by exponential distributions of the interface state density replacing the single interface state trap. Furthermore, the simulation reveals that the oxide quality of the base emitter junction interface is very important for 4H--SiC BJT performance.

Abstract: This paper studies two-dimensional analysis of the surface state effect on current gain for a 4H--SiC bipolar junction transistor (BJT). Simulation results indicate the mechanism of current gain degradation, which is surface Fermi level pinning leading to a strong downward bending of the energy bands to form the channel of surface electron recombination current. The experimental results are well-matched with the simulation, which is modeled by exponential distributions of the interface state density replacing the single interface state trap. Furthermore, the simulation reveals that the oxide quality of the base emitter junction interface is very important for 4H--SiC BJT performance.

Key words: 4H--SiC, bipolar junction transistor, current gain, interface state trap

中图分类号: (Bipolar transistors)

85.30.Pq

85.30.De (Semiconductor-device characterization, design, and modeling) 73.20.At (Surface states, band structure, electron density of states) 73.40.Lq (Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 73.25.+i (Surface conductivity and carrier phenomena)

张有润, 张波, 李肇基, 邓小川. Two-dimensional analysis of the interface states effects on current gain for 4H－SiC bipolar junction transistor[J]. 中国物理B, 2010, 19(6): 67102-067102.

Zhang You-Run(张有润), Zhang Bo(张波), Li Zhao-Ji(李肇基), and Deng Xiao-Chuan(邓小川). Two-dimensional analysis of the interface states effects on current gain for 4H－SiC bipolar junction transistor[J]. Chin. Phys. B, 2010, 19(6): 67102-067102.

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Two-dimensional analysis of the interface states effects on current gain for 4H－SiC bipolar junction transistor

Two-dimensional analysis of the interface states effects on current gain for 4H－SiC bipolar junction transistor

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