Two-dimensional analysis of the interface states effects on current gain for 4H-SiC bipolar junction transistor
张有润, 张波, 李肇基, 邓小川
Two-dimensional analysis of the interface states effects on current gain for 4H-SiC bipolar junction transistor
Zhang You-Run(张有润), Zhang Bo(张波), Li Zhao-Ji(李肇基), and Deng Xiao-Chuan(邓小川)
中国物理B . 2010, (6): 67102 -067102 .  DOI: 10.1088/1674-1056/19/6/067102