An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

doi:10.1088/1674-1056/19/4/047306

中国物理B ›› 2010, Vol. 19 ›› Issue (4): 47306-47306.doi: 10.1088/1674-1056/19/4/047306

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇下一篇

An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

张立宁, 何进, 周旺, 陈林, 徐艺文

Tera-Scale Research Centre, Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China

收稿日期:2009-07-05 修回日期:2009-08-02 出版日期:2010-04-15 发布日期:2010-04-15
基金资助:
Project supported by National Natural Science Foundation of China (Grant No.~60876027) and Research Fund for the Doctoral Program of Higher Education of China (Grant No.~200800010054).

An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

Zhang Li-Ning(张立宁)^a)^†, He Jin(何进)^a)b), Zhou Wang(周旺)^a), Chen Lin(陈林)^a), and Xu Yi-Wen(徐艺文)^a)

^a Tera-Scale Research Centre, Key Laboratory of Microelectronic Devices and Circuits of Ministry of Education, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China; ^b Research Centre of Micro- & Nano-Device and Technology, The Key Laboratory of Integrated Microsystems, Peking University Shenzhen Graduate School, Shenzhen 518055, China

Received:2009-07-05 Revised:2009-08-02 Online:2010-04-15 Published:2010-04-15
Supported by:
Project supported by National Natural Science Foundation of China (Grant No.~60876027) and Research Fund for the Doctoral Program of Higher Education of China (Grant No.~200800010054).

摘要/Abstract

摘要： This paper studies an oxide/silicon {c}ore/{s}hell {n}anowire {M}OSFET (OS-CSNM). Through three-dimensional device simulations, we have demonstrated that the OS-CSNM has a lower leakage current and higher $I_{\rm on}/I_{\rm off}$ ratio after introducing the oxide core into a {t}raditional {n}anowire {M}OSFET (TNM). The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off, drain induced barrier lowering and subthreshold swing degradation. Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.

Abstract: This paper studies an oxide/silicon core/shell nanowire MOSFET (OS-CSNM). Through three-dimensional device simulations, we have demonstrated that the OS-CSNM has a lower leakage current and higher $I_{\rm on}$/$I_{\rm off}$ ratio after introducing the oxide core into a traditional nanowire MOSFET (TNM). The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off, drain induced barrier lowering and subthreshold swing degradation. Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.

Key words: core/shell, nanowire, nanowire MOSFET

中图分类号: (Field effect devices)

85.30.Tv

85.30.De (Semiconductor-device characterization, design, and modeling) 85.35.-p (Nanoelectronic devices)

张立宁, 何进, 周旺, 陈林, 徐艺文. An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor[J]. 中国物理B, 2010, 19(4): 47306-47306.

Zhang Li-Ning(张立宁), He Jin(何进), Zhou Wang(周旺), Chen Lin(陈林), and Xu Yi-Wen(徐艺文). An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor[J]. Chin. Phys. B, 2010, 19(4): 47306-47306.

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An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

An oxide/silicon core/shell nanowire metal-oxide semiconductor field-effect transistor

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