中国物理B ›› 2010, Vol. 19 ›› Issue (4): 47306-47306.doi: 10.1088/1674-1056/19/4/047306
• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇 下一篇
张立宁, 何进, 周旺, 陈林, 徐艺文
Zhang Li-Ning(张立宁)a)†, He Jin(何进)a)b), Zhou Wang(周旺)a), Chen Lin(陈林)a), and Xu Yi-Wen(徐艺文)a)
摘要: This paper studies an oxide/silicon {c}ore/{s}hell {n}anowire {M}OSFET (OS-CSNM). Through three-dimensional device simulations, we have demonstrated that the OS-CSNM has a lower leakage current and higher $I_{\rm on}/I_{\rm off}$ ratio after introducing the oxide core into a {t}raditional {n}anowire {M}OSFET (TNM). The oxide/silicon OS-CSNM structure suppresses threshold voltage roll-off, drain induced barrier lowering and subthreshold swing degradation. Smaller intrinsic device delay is also observed in OS-CSNM in comparison with that of TNM.
中图分类号: (Field effect devices)