中国物理B ›› 2010, Vol. 19 ›› Issue (4): 47305-047305.doi: 10.1088/1674-1056/19/4/047305

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Simulation research on offset field-plate used as edge termination in 4H－SiC merged PiN-Schottky diodes

陈丰平, 张玉明, 张义门, 吕红亮, 宋庆文   

  1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2009-08-28 修回日期:2009-10-22 出版日期:2010-04-15 发布日期:2010-04-15
  • 基金资助:
    Project supported by Applied Materials Innovation Fund (Grant No.~XA-AM-200702) and the 13115 Innovation Engineering of Shaanxi Province, China (Grant No.~2008ZDKG-30).

Simulation research on offset field-plate used as edge termination in 4H－SiC merged PiN-Schottky diodes

Chen Feng-Ping(陈丰平)† , Zhang Yu-Ming(张玉明), Zhang Yi-Men(张义门), LÜ Hong-Liang(吕红亮), and Song Qing-Wen(宋庆文)   

  1. School of Microelectronics, Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2009-08-28 Revised:2009-10-22 Online:2010-04-15 Published:2010-04-15
  • Supported by:
    Project supported by Applied Materials Innovation Fund (Grant No.~XA-AM-200702) and the 13115 Innovation Engineering of Shaanxi Province, China (Grant No.~2008ZDKG-30).

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摘要： A new structure of 4H--silicon carbide (SiC) merged PiN-Schottky (MPS) diodes with offset field-plate (FP) as edge termination is developed. To understand the influences of 4H--SiC MPS diodes with offset FP on the characteristics, simulations have been done by using ISE TCAD. Related factors of offset FP have been studied as well to optimise the reverse characteristics of 4H--SiC MPS diodes. The simulation results show that the device using offset FP can create a higher blocking voltage under reverse bias as compared with that using field guard rings. Besides, the offset FP does not cause any extra steps in the manufacture of MPS diodes.

Abstract: A new structure of 4H--silicon carbide (SiC) merged PiN-Schottky (MPS) diodes with offset field-plate (FP) as edge termination is developed. To understand the influences of 4H--SiC MPS diodes with offset FP on the characteristics, simulations have been done by using ISE TCAD. Related factors of offset FP have been studied as well to optimise the reverse characteristics of 4H--SiC MPS diodes. The simulation results show that the device using offset FP can create a higher blocking voltage under reverse bias as compared with that using field guard rings. Besides, the offset FP does not cause any extra steps in the manufacture of MPS diodes.

Key words: 4H--SiC, merged PiN-Schottky, offset field-plate, reverse characteristics

中图分类号:  (Junction diodes)

  • 85.30.Kk
85.30.Hi (Surface barrier, boundary, and point contact devices) 85.30.De (Semiconductor-device characterization, design, and modeling) 73.30.+y (Surface double layers, Schottky barriers, and work functions)