Electric-stress reliability and current collapse of different thickness SiN
x passivated AlGaN/GaN high electron mobility transistors
杨凌, 胡贵州, 郝跃, 马晓华, 全思, 杨丽媛, 姜守高
Electric-stress reliability and current collapse of different thickness SiN
x passivated AlGaN/GaN high electron mobility transistors
Yang Ling(杨凌), Hu Gui-Zhou(胡贵州), Hao Yue(郝跃), Ma Xiao-Hua(马晓华), Quan Si(全思), Yang Li-Yuan(杨丽媛), and Jiang Shou-Gao(姜守高)
中国物理B
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2010, (4): 47301
-047301
.
DOI: 10.1088/1674-1056/19/4/047301