Study of a 4H－SiC epitaxial n-channel MOSFET
汤晓燕, 张玉明, 张义门
Study of a 4H－SiC epitaxial n-channel MOSFET
Tang Xiao-Yan(汤晓燕), Zhang Yu-Ming(张玉明), and Zhang Yi-Men(张义门)
中国物理B . 2010, (4): 47204 -047204 .  DOI: 10.1088/1674-1056/19/4/047204