中国物理B ›› 2010, Vol. 19 ›› Issue (3): 37201-037201.doi: 10.1088/1674-1056/19/3/037201

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Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs

马中发, 张鹏, 吴勇, 李伟华, 庄奕琪, 杜磊   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China
  • 收稿日期:2009-05-29 修回日期:2009-07-01 出版日期:2010-03-15 发布日期:2010-03-15

Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs

Ma Zhong-Fa(马中发)†, Zhang Peng(张鹏), Wu Yong(吴勇), Li Wei-Hua(李伟华), Zhuang Yi-Qi(庄奕琪), and Du Lei(杜磊)   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China
  • Received:2009-05-29 Revised:2009-07-01 Online:2010-03-15 Published:2010-03-15

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摘要： This paper presents an accurate analytical model of the random telegraph signal (RTS) noise time-constant ratio ($\bar{\tau}_{\rm c}/\bar{\tau}_{\rm e}$) for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account. Based on this new model, the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted. The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected.

Abstract: This paper presents an accurate analytical model of the random telegraph signal (RTS) noise time-constant ratio ($\bar{\tau}_{\rm c}/\bar{\tau}_{\rm e}$) for RTS noise in nano-MOSFETs, in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account. Based on this new model, the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted. The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected.

Key words: trap, RTS noise, nano-MOSFETs

中图分类号:  (Field effect devices)

  • 85.30.Tv
73.23.Hk (Coulomb blockade; single-electron tunneling) 85.40.Ry (Impurity doping, diffusion and ion implantation technology)