中国物理B ›› 2010, Vol. 19 ›› Issue (3): 37202-037202.doi: 10.1088/1674-1056/19/3/037202
胡 昊1, 蔡金明1, 张晨栋1, 高敏1, 潘毅1, 杜世萱1, 孙庆丰1, 高鸿钧1, 谢心澄2, 牛谦3
Hu Hao(胡昊)a), Cai Jin-Ming(蔡金明)a), Zhang Chen-Dong(张晨栋) a), Gao Min(高敏)a), Pan Yi(潘毅)a), Du Shi-Xuan(杜世萱)a), Sun Qing-Feng(孙庆丰)a), Niu Qian(牛谦) b), Xie Xin-Cheng(谢心澄)a)c), and Gao Hong-Jun(高鸿钧)a)†
摘要: We investigate the thermoelectric-transport properties of metal/graphene/metal hetero-structure. We use a single band tight-binding model to present the two-dimensional electronic band structure of graphene. Using the Landauer--Butticker formula and taking the coupling between graphene and the two electrodes into account, we can calculate the thermoelectric potential and current versus temperature. It is found that in spite of metal electrodes, the carrier type of graphene determines the electron motion direction driven by the difference in temperature between the two electrodes, while for n type graphene, the electrons move along the thermal gradient, and for p type graphene, the electrons move against the thermal gradient.
中图分类号: (Metal-insulator-metal structures)