Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs
马中发, 张鹏, 吴勇, 李伟华, 庄奕琪, 杜磊
Accurate extraction of trap depth responsible for RTS noise in nano-MOSFETs
Ma Zhong-Fa(马中发), Zhang Peng(张鹏), Wu Yong(吴勇), Li Wei-Hua(李伟华), Zhuang Yi-Qi(庄奕琪), and Du Lei(杜磊)
中国物理B
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2010, (3): 37201
-037201
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DOI: 10.1088/1674-1056/19/3/037201