Optical spectroscopy study of damage evolution in 6H-SiC by H$_{2}^{ + }$ implantation

doi:10.1088/1674-1056/abe9a7

中国物理B ›› 2021, Vol. 30 ›› Issue (5): 56106-056106.doi: 10.1088/1674-1056/abe9a7

所属专题： SPECIAL TOPIC — Ion beam modification of materials and applications

Optical spectroscopy study of damage evolution in 6H-SiC by H$_{2}^{ + }$ implantation

Yong Wang(王勇)¹, Qing Liao(廖庆)², Ming Liu(刘茗)³, Peng-Fei Zheng(郑鹏飞)³, Xinyu Gao(高新宇)¹, Zheng Jia(贾政)¹, Shuai Xu(徐帅)², and Bing-Sheng Li(李炳生)^2,4,†

1 China Institute for Radiation Protection, Taiyuan 030006, China;
2 State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China;
3 Southwestern Institute of Physics, Chengdu 610041, China;
4 Engineering Research Center of Biomass Materials, Ministry of Education, Southwest University of Science and Technology, Mianyang 621010, China

收稿日期:2021-01-22 修回日期:2021-02-21 接受日期:2021-02-25 出版日期:2021-05-14 发布日期:2021-05-14
通讯作者: Bing-Sheng Li E-mail:libingshengmvp@163.com
基金资助:
Project supported by the National Natural Science Foundation of China (Grant No. 12075194), the Sichuan Provincial Science and Technology Program, China (Grant No. 2020ZYD055), and the National Key Research and Development Program of China (Grant No. 2017YFE0301306).

Optical spectroscopy study of damage evolution in 6H-SiC by H$_{2}^{ + }$ implantation

Yong Wang(王勇)¹, Qing Liao(廖庆)², Ming Liu(刘茗)³, Peng-Fei Zheng(郑鹏飞)³, Xinyu Gao(高新宇)¹, Zheng Jia(贾政)¹, Shuai Xu(徐帅)², and Bing-Sheng Li(李炳生)^2,4,†

1 China Institute for Radiation Protection, Taiyuan 030006, China;
2 State Key Laboratory for Environment-Friendly Energy Materials, Southwest University of Science and Technology, Mianyang 621010, China;
3 Southwestern Institute of Physics, Chengdu 610041, China;
4 Engineering Research Center of Biomass Materials, Ministry of Education, Southwest University of Science and Technology, Mianyang 621010, China

Received:2021-01-22 Revised:2021-02-21 Accepted:2021-02-25 Online:2021-05-14 Published:2021-05-14
Contact: Bing-Sheng Li E-mail:libingshengmvp@163.com
Supported by:
Project supported by the National Natural Science Foundation of China (Grant No. 12075194), the Sichuan Provincial Science and Technology Program, China (Grant No. 2020ZYD055), and the National Key Research and Development Program of China (Grant No. 2017YFE0301306).

摘要/Abstract

摘要： Lattice defects induced by ion implantation into SiC have been widely investigated in the decades by various techniques. One of the non-destructive techniques suitable to study the lattice defects in SiC is the optical characterization. In this work, confocal Raman scattering spectroscopy and photoluminescence spectrum have been used to study the effects of 134-keV H$_{2}^{ + }$ implantation and thermal treatment in the microstructure of 6H-SiC single crystal. The radiation-induced changes in the microstructure were assessed by integrating Raman-scattering peaks intensity and considering the asymmetry of Raman-scattering peaks. The integrated intensities of Raman scattering spectroscopy and photoluminescence spectrum decrease with increasing the fluence. The recovery of the optical intensities depends on the combination of the implantation temperature and the annealing temperature with the thermal treatment from 700 ℃ to 1100 ℃. The different characterizations of Raman scattering spectroscopy and photoluminescence spectrum are compared and discussed in this study.

关键词: SiC, H₂⁺ implantation, Raman scattering spectroscopy, photoluminescence spectrum

Abstract: Lattice defects induced by ion implantation into SiC have been widely investigated in the decades by various techniques. One of the non-destructive techniques suitable to study the lattice defects in SiC is the optical characterization. In this work, confocal Raman scattering spectroscopy and photoluminescence spectrum have been used to study the effects of 134-keV H$_{2}^{ + }$ implantation and thermal treatment in the microstructure of 6H-SiC single crystal. The radiation-induced changes in the microstructure were assessed by integrating Raman-scattering peaks intensity and considering the asymmetry of Raman-scattering peaks. The integrated intensities of Raman scattering spectroscopy and photoluminescence spectrum decrease with increasing the fluence. The recovery of the optical intensities depends on the combination of the implantation temperature and the annealing temperature with the thermal treatment from 700 ℃ to 1100 ℃. The different characterizations of Raman scattering spectroscopy and photoluminescence spectrum are compared and discussed in this study.

Key words: SiC, H₂⁺ implantation, Raman scattering spectroscopy, photoluminescence spectrum

中图分类号: (Physical radiation effects, radiation damage)

61.80.-x

61.80.Jh (Ion radiation effects) 78.30.-j (Infrared and Raman spectra) 78.55.-m (Photoluminescence, properties and materials)

Yong Wang(王勇), Qing Liao(廖庆), Ming Liu(刘茗), Peng-Fei Zheng(郑鹏飞), Xinyu Gao(高新宇), Zheng Jia(贾政), Shuai Xu(徐帅), and Bing-Sheng Li(李炳生). Optical spectroscopy study of damage evolution in 6H-SiC by H$_{2}^{ + }$ implantation[J]. 中国物理B, 2021, 30(5): 56106-056106.

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Optical spectroscopy study of damage evolution in 6H-SiC by H$_{2}^{ + }$ implantation

Optical spectroscopy study of damage evolution in 6H-SiC by H$_{2}^{ + }$ implantation

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