中国物理B ›› 2021, Vol. 30 ›› Issue (11): 116106-116106.doi: 10.1088/1674-1056/abfc3c

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Preparation of graphene on SiC by laser-accelerated pulsed ion beams

Danqing Zhou(周丹晴)1,†, Dongyu Li(李东彧)1,2,†, Yuhan Chen(陈钰焓)1, Minjian Wu(吴旻剑)1,2, Tong Yang(杨童)1,2, Hao Cheng(程浩)1,2, Yuze Li(李昱泽)1,2, Yi Chen(陈艺)1, Yue Li(李越)1, Yixing Geng(耿易星)1,2,3, Yanying Zhao(赵研英)1,2,3,‡, Chen Lin(林晨)1,2,3,§, Xueqing Yan(颜学庆)1,2,3, and Ziqiang Zhao(赵子强)1,¶   

  1. 1 State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China;
    2 Beijing Laser Acceleration Innovation Center, Huairou, Beijing 101400, China;
    3 Institute of Guangdong Laser Plasma Technology, Guangzhou 510540, China
  • 收稿日期:2021-04-06 修回日期:2021-04-06 接受日期:2021-04-28 出版日期:2021-10-13 发布日期:2021-10-22
  • 通讯作者: Chen Lin, Xueqing Yan, Ziqiang Zhao E-mail:lc0812@pku.edu.cn;x.yan@pku.edu.cn;zqzhao@pku.edu.cn
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11875077, 11975037, and 11921006) and the National Grand Instrument Project of China (Grant Nos. 2019YFF01014400 and 2019YFF01014404).

Preparation of graphene on SiC by laser-accelerated pulsed ion beams

Danqing Zhou(周丹晴)1,†, Dongyu Li(李东彧)1,2,†, Yuhan Chen(陈钰焓)1, Minjian Wu(吴旻剑)1,2, Tong Yang(杨童)1,2, Hao Cheng(程浩)1,2, Yuze Li(李昱泽)1,2, Yi Chen(陈艺)1, Yue Li(李越)1, Yixing Geng(耿易星)1,2,3, Yanying Zhao(赵研英)1,2,3,‡, Chen Lin(林晨)1,2,3,§, Xueqing Yan(颜学庆)1,2,3, and Ziqiang Zhao(赵子强)1,¶   

  1. 1 State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871, China;
    2 Beijing Laser Acceleration Innovation Center, Huairou, Beijing 101400, China;
    3 Institute of Guangdong Laser Plasma Technology, Guangzhou 510540, China
  • Received:2021-04-06 Revised:2021-04-06 Accepted:2021-04-28 Online:2021-10-13 Published:2021-10-22
  • Contact: Chen Lin, Xueqing Yan, Ziqiang Zhao E-mail:lc0812@pku.edu.cn;x.yan@pku.edu.cn;zqzhao@pku.edu.cn
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant Nos. 11875077, 11975037, and 11921006) and the National Grand Instrument Project of China (Grant Nos. 2019YFF01014400 and 2019YFF01014404).

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摘要： Laser-accelerated ion beams (LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here we explore an application of using laser-accelerated ion beams to prepare graphene. The pulsed LIBs produced a great instantaneous beam current and thermal effect on the SiC samples with a shooting frequency of 1 Hz. In the experiment, we controlled the deposition dose by adjusting the number of shootings and the irradiating current by adjusting the distance between the sample and the ion source. During annealing at 1100 ℃, we found that the 190 shots ion beams allowed more carbon atoms to self-assemble into graphene than the 10 shots case. By comparing with the controlled experiment based on ion beams from a traditional ion accelerator, we found that the laser-accelerated ion beams could cause greater damage in a very short time. Significant thermal effect was induced when the irradiation distance was reduced to less than 1 cm, which could make partial SiC self-annealing to prepare graphene dots directly. The special effects of LIBs indicate their vital role to change the structure of the irradiation sample.

关键词: laser ion acceleration, graphene, self-annealing

Abstract: Laser-accelerated ion beams (LIBs) have been increasingly applied in the field of material irradiation in recent years due to the unique properties of ultra-short beam duration, extremely high beam current, etc. Here we explore an application of using laser-accelerated ion beams to prepare graphene. The pulsed LIBs produced a great instantaneous beam current and thermal effect on the SiC samples with a shooting frequency of 1 Hz. In the experiment, we controlled the deposition dose by adjusting the number of shootings and the irradiating current by adjusting the distance between the sample and the ion source. During annealing at 1100 ℃, we found that the 190 shots ion beams allowed more carbon atoms to self-assemble into graphene than the 10 shots case. By comparing with the controlled experiment based on ion beams from a traditional ion accelerator, we found that the laser-accelerated ion beams could cause greater damage in a very short time. Significant thermal effect was induced when the irradiation distance was reduced to less than 1 cm, which could make partial SiC self-annealing to prepare graphene dots directly. The special effects of LIBs indicate their vital role to change the structure of the irradiation sample.

Key words: laser ion acceleration, graphene, self-annealing

中图分类号:  (Ion radiation effects)

  • 61.80.Jh
81.05.ue (Graphene) 68.65.Pq (Graphene films) 41.75.Jv (Laser-driven acceleration?)