Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation
薛守斌, 黄如, 黄德涛, 王思浩, 谭斐, 王健, 安霞, 张兴
Impact of the displacement damage in channel and source/drain regions on the DC characteristics degradation in deep-submicron MOSFETs after heavy ion irradiation
Xue Shou-Bin(薛守斌), Huang Ru(黄如), Huang De-Tao(黄德涛), Wang Si-Hao(王思浩), Tan Fei(谭斐), Wang Jian(王健), An Xia (安霞), and Zhang Xing(张兴)
中国物理B
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2010, (11): 117307
-117307
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DOI: 10.1088/1674-1056/19/11/117307