中国物理B ›› 2010, Vol. 19 ›› Issue (1): 17202-017202.doi: 10.1088/1674-1056/19/1/017202

• • 上一篇    下一篇

Influence of oxygen on the growth of cubic boron nitride thin films by plasma-enhanced chemical vapour deposition

杨杭生, 聂安民, 邱发敏   

  1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • 收稿日期:2009-07-16 修回日期:2009-07-27 出版日期:2010-01-15 发布日期:2010-01-15
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No. 50772096) and the Educational Department of Zhejiang Province, China (Grant No. 20061365).

Influence of oxygen on the growth of cubic boron nitride thin films by plasma-enhanced chemical vapour deposition

Yang Hang-Sheng(杨杭生)† , Nie An-Min(聂安民), and Qiu Fa-Min(邱发敏)   

  1. State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
  • Received:2009-07-16 Revised:2009-07-27 Online:2010-01-15 Published:2010-01-15
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No. 50772096) and the Educational Department of Zhejiang Province, China (Grant No. 20061365).

PDF (PC)

938

赞

摘要： Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasma-enhanced chemical vapour deposition. It was found that the introduction of O2 into the deposition system suppresses both nucleation and growth of cubic boron nitride. At a B2H6 concentration of 2.5\% during film deposition, the critical O2 concentration allowed for the nucleation of cubic boron nitride was found to be less than 1.4\%, while that for the growth of cubic boron nitride was higher than 2.1\%. Moreover, the infrared absorption peak observed at around 1230--1280~cm-1, frequently detected for cubic boron nitride films prepared using non-ultrahigh vacuum systems, appears to be due to the absorption of boron oxide, a contaminant formed as a result of the oxygen impurity. Therefore, the existence of trace oxygen contamination in boron nitride films can be evaluated qualitatively by this infrared absorption peak.

Abstract: Cubic boron nitride thin films were deposited on silicon substrates by low-pressure inductively coupled plasma-enhanced chemical vapour deposition. It was found that the introduction of O2 into the deposition system suppresses both nucleation and growth of cubic boron nitride. At a B2H6 concentration of 2.5% during film deposition, the critical O2 concentration allowed for the nucleation of cubic boron nitride was found to be less than 1.4%, while that for the growth of cubic boron nitride was higher than 2.1%. Moreover, the infrared absorption peak observed at around 1230--1280 cm-1, frequently detected for cubic boron nitride films prepared using non-ultrahigh vacuum systems, appears to be due to the absorption of boron oxide, a contaminant formed as a result of the oxygen impurity. Therefore, the existence of trace oxygen contamination in boron nitride films can be evaluated qualitatively by this infrared absorption peak.

Key words: cubic boron nitride films, infrared spectroscopy, plasma-enhanced chemical vapour deposition

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
68.55.A- (Nucleation and growth) 68.55.Ln (Defects and impurities: doping, implantation, distribution, concentration, etc.) 78.30.Hv (Other nonmetallic inorganics) 78.66.Li (Other semiconductors) 81.15.Gh (Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))