A novel structure of a high current gain 4H-SiC BJT with a buried layer in base

doi:10.1088/1674-1056/18/9/063

中国物理B ›› 2009, Vol. 18 ›› Issue (9): 3995-3999.doi: 10.1088/1674-1056/18/9/063

A novel structure of a high current gain 4H-SiC BJT with a buried layer in base

张有润, 张波, 李肇基, 邓小川, 刘曦麟

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic[1.8mm] Science and Technology of China, Chengdu 610054, China

收稿日期:2008-11-10 修回日期:2009-01-20 出版日期:2009-09-20 发布日期:2009-09-20

A novel structure of a high current gain 4H-SiC BJT with a buried layer in base

Zhang You-Run(张有润)^†, Zhang Bo(张波), Li Zhao-Ji(李肇基), Deng Xiao-Chuan(邓小川), and Liu Xi-Ling(刘曦麟)

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic[1.8mm] Science and Technology of China, Chengdu 610054, China

Received:2008-11-10 Revised:2009-01-20 Online:2009-09-20 Published:2009-09-20

摘要/Abstract

摘要： In this paper, a new structure of a 4H-SiC bipolar junction transistor (BJT) with a buried layer (BL) in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.

Abstract: In this paper, a new structure of a 4H-SiC bipolar junction transistor (BJT) with a buried layer (BL) in the base is presented. The current gain shows an approximately 100% increase compared with that of the conventional structure. This is attributed to the creation of a built-in electric field for the minority carriers to transport in the base which is explained based on 2D device simulations. The optimized design of the buried layer region is also considered by numeric simulations.

Key words: 4H-SiC, bipolar junction transistor (BJT), buried layer, current gain

中图分类号: (Bipolar transistors)

85.30.Pq

85.30.De (Semiconductor-device characterization, design, and modeling)

张有润, 张波, 李肇基, 邓小川, 刘曦麟. A novel structure of a high current gain 4H-SiC BJT with a buried layer in base[J]. 中国物理B, 2009, 18(9): 3995-3999.

Zhang You-Run(张有润), Zhang Bo(张波), Li Zhao-Ji(李肇基), Deng Xiao-Chuan(邓小川), and Liu Xi-Ling(刘曦麟). A novel structure of a high current gain 4H-SiC BJT with a buried layer in base[J]. Chin. Phys. B, 2009, 18(9): 3995-3999.

[1]	Jin-Ping Zhang(张金平), Hao-Nan Deng(邓浩楠), Rong-Rong Zhu(朱镕镕), Ze-Hong Li(李泽宏), and Bo Zhang(张波). High performance carrier stored trench bipolar transistor with dual shielding structure[J]. 中国物理B, 2023, 32(3): 38501-038501.
[2]	Manhong Zhang(张满红) and Wanchen Wu(武万琛). An insulated-gate bipolar transistor model based on the finite-volume charge method[J]. 中国物理B, 2022, 31(12): 128501-128501.
[3]	Yuan-Ting Huang(黄垣婷), Xiu-Hai Cui(崔秀海), Jian-Qun Yang(杨剑群), Tao Ying(应涛), Xue-Qiang Yu(余雪强), Lei Dong(董磊), Wei-Qi Li(李伟奇), and Xing-Ji Li(李兴冀). Radiation effects of 50-MeV protons on PNP bipolar junction transistors[J]. 中国物理B, 2022, 31(2): 28502-028502.
[4]	. [J]. 中国物理B, 2021, 30(2): 28501-0.
[5]	孙圣, 李育智, 张盛东. High-performance inverters based on ambipolar organic-inorganic heterojunction thin-film transistors[J]. 中国物理B, 2020, 29(5): 58503-058503.
[6]	刘岩, 陈伟, 贺朝会, 苏春垒, 王晨辉, 金晓明, 李俊霖, 薛院院. Analysis of displacement damage effects on bipolar transistors irradiated by spallation neutrons[J]. 中国物理B, 2019, 28(6): 67302-067302.
[7]	魏佳男, 贺朝会, 李培, 李永宏. Research on SEE mitigation techniques using back junction and p⁺ buffer layer in domestic non-DTI SiGe HBTs by TCAD[J]. 中国物理B, 2019, 28(6): 68503-068503.
[8]	温正欣, 张峰, 申占伟, 陈俊, 何亚伟, 闫果果, 刘兴昉, 赵万顺, 王雷, 孙国胜, 曾一平. Design and fabrication of 10-kV silicon-carbide p-channel IGBTs with hexagonal cells and step space modulated junction termination extension[J]. 中国物理B, 2019, 28(6): 68504-068504.
[9]	张晋新, 郭红霞, 潘霄宇, 郭旗, 张凤祁, 冯娟, 王信, 魏莹, 吴宪祥. Synergistic effect of total ionizing dose on single event effect induced by pulsed laser microbeam on SiGe heterojunction bipolar transistor[J]. 中国物理B, 2018, 27(10): 108501-108501.
[10]	李慧, 柴常春, 刘彧千, 吴涵, 杨银堂. Damage effects and mechanism of the silicon NPN monolithic composite transistor induced by high-power microwaves[J]. 中国物理B, 2018, 27(8): 88502-088502.
[11]	陈伟中, 黄垚, 贺利军, 韩郑生, 黄义. A snapback-free TOL-RC-LIGBT with vertical P-collector and N-buffer design[J]. 中国物理B, 2018, 27(8): 88501-088501.
[12]	李小龙, 陆妩, 王信, 于新, 郭旗, 孙静, 刘默寒, 姚帅, 魏昕宇, 何承发. Estimation of enhanced low dose rate sensitivity mechanisms using temperature switching irradiation on gate-controlled lateral PNP transistor[J]. 中国物理B, 2018, 27(3): 36102-036102.
[13]	孙亚宾, 李小进, 张金中, 石艳玲. Improved high-frequency equivalent circuit model based on distributed effects for SiGe HBTs with CBE layout[J]. 中国物理B, 2017, 26(9): 98502-098502.
[14]	李培, 刘默寒, 贺朝会, 郭红霞, 张晋新, 马婷. An investigation of ionizing radiation damage in different SiGe processes[J]. 中国物理B, 2017, 26(8): 88503-088503.
[15]	张晋新, 贺朝会, 郭红霞, 李培, 郭宝龙, 吴宪祥. Three-dimensional simulation of fabrication process-dependent effects on single event effects of SiGe heterojunction bipolar transistor[J]. 中国物理B, 2017, 26(8): 88502-088502.

A novel structure of a high current gain 4H-SiC BJT with a buried layer in base

A novel structure of a high current gain 4H-SiC BJT with a buried layer in base

PDF (PC)

赞

可视化

摘要/Abstract

引用本文

使用本文

参考文献

相关文章 15

Metrics

本文评价

推荐阅读 0