中国物理B ›› 2009, Vol. 18 ›› Issue (9): 3990-3994.doi: 10.1088/1674-1056/18/9/062

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Study on characteristics of a double-conductible channel organic thin-films transistor with an ultra-thin hole-blocking layer

袁广才1, 徐征1, 赵谡玲1, 张福俊1, 田雪雁1, 徐叙瑢1, 许娜2   

  1. (1)Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China;Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China; (2)School of Sciences, Beijing Jiaotong University, Beijing 100044, China
  • 收稿日期:2008-12-30 修回日期:2009-01-21 出版日期:2009-09-20 发布日期:2009-09-20
  • 基金资助:
    Project supported by the National High Technology Research and Development Program of China (Grant No 2006AA03Z0412), the National Natural Science Foundation of China (Grant Nos 10774013 and 10804006), the Excellent Doctor's Science and Technology Innovation Foundation of Beijing Jiaotong University (Grant No 48024), the Research Fund for the Youth Scholars of the Doctoral Program of Higher Education (Grant No 20070004031), the Beijing NOVA program (Grant No 2007A024), the Project Sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry and the Foundation of Beijing Jiaotong University (Grant No 2005SM057).

Study on characteristics of a double-conductible channel organic thin-films transistor with an ultra-thin hole-blocking layer

Yuan Guang-Cai(袁广才)a)b), Xu Zheng(徐征)a)b)†, Zhao Su-Ling(赵谡玲)a)b), Zhang Fu-Jun(张福俊)a)b), Xu Na(许娜)c), Tian Xue-Yan(田雪雁)a)b), and Xu Xu-Rong(徐叙瑢)a)b)   

  1. a Institute of Optoelectronics Technology, Beijing Jiaotong University, Beijing 100044, China; b Key Laboratory of Luminescence and Optical Information (Beijing Jiaotong University), Ministry of Education, Beijing 100044, China; c School of Sciences, Beijing Jiaotong University, Beijing 100044, China
  • Received:2008-12-30 Revised:2009-01-21 Online:2009-09-20 Published:2009-09-20
  • Supported by:
    Project supported by the National High Technology Research and Development Program of China (Grant No 2006AA03Z0412), the National Natural Science Foundation of China (Grant Nos 10774013 and 10804006), the Excellent Doctor's Science and Technology Innovation Foundation of Beijing Jiaotong University (Grant No 48024), the Research Fund for the Youth Scholars of the Doctoral Program of Higher Education (Grant No 20070004031), the Beijing NOVA program (Grant No 2007A024), the Project Sponsored by the Scientific Research Foundation for the Returned Overseas Chinese Scholars, State Education Ministry and the Foundation of Beijing Jiaotong University (Grant No 2005SM057).

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摘要： The properties of top-contact organic thin-film transistors (TC-OTFTs) using ultra-thin 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP) as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers are limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS=-20~V showed excellent hole mobility μFE and threshold voltage VTH of 0.58~cm2/(V\cdots) and --4.6~V, respectively.

Abstract: The properties of top-contact organic thin-film transistors (TC-OTFTs) using ultra-thin 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP) as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers are limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS = -20 V showed excellent hole mobility $\mu_{\rm FE}$ and threshold voltage $V_{\rm TH}$ of 0.58 cm2/(V$\cdot$s) and --4.6 V, respectively.

Key words: organic thin-film transistor, ultra-thin hole-blocking layer, double-conductible channels

中图分类号:  (Field effect devices)

  • 85.30.Tv
72.20.Ee (Mobility edges; hopping transport) 85.30.De (Semiconductor-device characterization, design, and modeling)