中国物理B ›› 2009, Vol. 18 ›› Issue (9): 3990-3994.doi: 10.1088/1674-1056/18/9/062
袁广才1, 徐征1, 赵谡玲1, 张福俊1, 田雪雁1, 徐叙瑢1, 许娜2
Yuan Guang-Cai(袁广才)a)b), Xu Zheng(徐征)a)b)†, Zhao Su-Ling(赵谡玲)a)b), Zhang Fu-Jun(张福俊)a)b), Xu Na(许娜)c), Tian Xue-Yan(田雪雁)a)b), and Xu Xu-Rong(徐叙瑢)a)b)
摘要: The properties of top-contact organic thin-film transistors (TC-OTFTs) using ultra-thin 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline (BCP) as a hole-blocking interlayer have been improved significantly and a BCP interlayer was inserted into the middle of the pentacene active layer. This paper obtains a fire-new transport mode of an OTFT device with double-conductible channels. The accumulation and transfer of the hole carriers are limited by the BCP interlayer in the vertical region of the channel. A huge amount of carriers is located not only at the interface between pentacene and the gate insulator, but also at the two interfaces of pentacene/BCP interlayer and pentacene/gate insulator, respectively. The results suggest that the BCP interlayer may be useful to adjust the hole accumulation and transfer, and can increase the hole mobility and output current of OTFTs. The TC-OTFTs with a BCP interlayer at VDS=-20~V showed excellent hole mobility μFE and threshold voltage VTH of 0.58~cm2/(V\cdots) and --4.6~V, respectively.
中图分类号: (Field effect devices)