中国物理B ›› 2009, Vol. 18 ›› Issue (8): 3490-3494.doi: 10.1088/1674-1056/18/8/059
张林, 张义门, 张玉明, 韩超, 马永吉
Zhang Lin(张林)†, Zhang Yi-Men(张义门), Zhang Yu-Ming(张玉明), Han Chao(韩超), and Ma Yong-Ji(马永吉)
摘要: The Ni/4H-SiC Schottky barrier diodes (SBDs) and transfer length method (TLM) test patterns of Ni/4H-SiC Ohmic contacts were fabricated, and irradiated with 1~MeV electrons up to a dose of 3.43× 1014~e/cm-2. After radiation, the forward currents of the SBDs at 2~V decreased by about 50%, and the reverse currents at -200~V increased by less than 30%. Schottky barrier height (φ B ) of the Ni/4H-SiC SBD increased from 1.20~eV to 1.21~eV under 0~V irradiation bias, and decreased from 1.25~eV to 1.19~eV under -30~V irradiation bias. The degradation of φ B could be explained by the variation of interface states of Schottky contacts. The on-state resistance (Rs) and the reverse current increased with the dose, which can be ascribed to the radiation defects in bulk material. The specific contact resistance (\rhoc) of the Ni/SiC Ohmic contact increased from 5.11× 105~Ωega.cm2 to 2.97× 10-4~Ωega.cm2.
中图分类号: (Junction diodes)