中国物理B ›› 2009, Vol. 18 ›› Issue (7): 3014-3017.doi: 10.1088/1674-1056/18/7/066

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The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment

冯倩, 田园, 毕志伟, 岳远征, 倪金玉, 进成, 郝跃, 杨林安   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2008-10-31 修回日期:2008-12-25 出版日期:2009-07-20 发布日期:2009-07-20
  • 基金资助:
    Project supported by National Advanced Research Program (Grant No 51308030102) and Xi'an Applied Materials Innovation Fund (Grant No XA-AM-200616) and National Natural Science Foundation of China (Grant Nos 60506020 and 60676048).

The improvement of Al2O3/AlGaN/GaN MISHEMT performance by N2 plasma pretreatment

Feng Qian(冯倩)†, Tian Yuan(田园), Bi Zhi-Wei(毕志伟), Yue Yuan-Zheng(岳远征), Ni Jin-Yu(倪金玉), Zhang Jin-Cheng(张进成), Hao Yue(郝跃)‡, and Yang Lin-An(杨林安)   

  1. School of Microelectronics, Xidian University, Xi'an 710071, China Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2008-10-31 Revised:2008-12-25 Online:2009-07-20 Published:2009-07-20
  • Supported by:
    Project supported by National Advanced Research Program (Grant No 51308030102) and Xi'an Applied Materials Innovation Fund (Grant No XA-AM-200616) and National Natural Science Foundation of China (Grant Nos 60506020 and 60676048).

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摘要： This paper discusses the effect of N2 plasma treatment before dielectric deposition on the electrical performance of a Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT), with Al2O3 deposited by atomic layer deposition. The results indicated that the gate leakage was decreased two orders of magnitude after the Al2O3/AlGaN interface was pretreated by N2 plasma. Furthermore, effects of N2 plasma pretreatment on the electrical properties of the AlGaN/Al2O1-x interface were investigated by x-ray photoelectron spectroscopy measurements and the interface quality between Al2O3 and AlGaN film was improved.

Abstract: This paper discusses the effect of N2 plasma treatment before dielectric deposition on the electrical performance of a Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor (MISHEMT), with Al2O3 deposited by atomic layer deposition. The results indicated that the gate leakage was decreased two orders of magnitude after the Al2O3/AlGaN interface was pretreated by N2 plasma. Furthermore, effects of N2 plasma pretreatment on the electrical properties of the AlGaN/Al2O3 interface were investigated by x-ray photoelectron spectroscopy measurements and the interface quality between Al2O3 and AlGaN film was improved.

Key words: Al2O3/AlGaN/GaN MISHEMT, atomic layer deposition, N2 plasma pretreatment

中图分类号:  (Field effect devices)

  • 85.30.Tv
52.77.-j (Plasma applications) 73.40.Qv (Metal-insulator-semiconductor structures (including semiconductor-to-insulator)) 79.60.Jv (Interfaces; heterostructures; nanostructures)