中国物理B ›› 2009, Vol. 18 ›› Issue (11): 5020-5023.doi: 10.1088/1674-1056/18/11/067

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Characterization of ZnO nanowire field-effect transistors and exposed to ultraviolet radiation

郭常新1, 黎明2, 张海英2, 徐静波2, 付晓君2, 陈普锋2   

  1. (1)Department of Physic, University of Science and Technology of China, Hefei 230026, China; (2)Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
  • 收稿日期:2008-12-23 修回日期:2009-04-22 出版日期:2009-11-20 发布日期:2009-11-20
  • 基金资助:
    Project supported by the Dean Fund of Institute of Microelectronics, Chinese Academy of Sciences (Grant No 08SB034002).

Characterization of ZnO nanowire field-effect transistors and exposed to ultraviolet radiation

Li Ming(黎明)a)†, Zhang Hai-Ying(张海英)a), Guo Chang-Xin(郭常新)b), Xu Jing-Bo(徐静波)a), Fu Xiao-Jun(付晓君)a), and Chen Pu-Feng(陈普锋)a)   

  1. a Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China; b Department of Physic, University of Science and Technology of China, Hefei 230026, China
  • Received:2008-12-23 Revised:2009-04-22 Online:2009-11-20 Published:2009-11-20
  • Supported by:
    Project supported by the Dean Fund of Institute of Microelectronics, Chinese Academy of Sciences (Grant No 08SB034002).

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摘要： A ZnO nanowire (NW) field-effect transistor (FET) is fabricated and characterized, and its characterization of ultraviolet radiation is also investigated. On the one hand, when the radiation time is 5~min, the radiation intensity increases to 5.1~μ W/cm2, while the saturation drain current (I_\rm dss) of the nanowire FET decreases sharply from 560 to 320~nA. The field effect mobility (μ ) of the ZnO nanowire FET drops from 50.17 to 23.82~cm2/(V.s) at V_\rm DS=2.5~V, and the channel resistivity of the FET increases by a factor of 2. On the other hand, when the radiation intensity is 2.5~μ W/cm^2 , the DC performance of the FET does not change significantly with irradiation time (its performances at irradiation times of 5 and 20~min are almost the same); in particular, the I_\rm dss of NW FET only reduces by about 50~nA. Research is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.

Abstract: A ZnO nanowire (NW) field-effect transistor (FET) is fabricated and characterized, and its characterization of ultraviolet radiation is also investigated. On the one hand, when the radiation time is 5~min, the radiation intensity increases to 5.1 μW/cm2, while the saturation drain current (Idss) of the nanowire FET decreases sharply from 560 to 320 nA. The field effect mobility (μ) of the ZnO nanowire FET drops from 50.17 to 23.82 cm2/(V$\cdot$s) at VDS = 2.5 V, and the channel resistivity of the FET increases by a factor of 2. On the other hand, when the radiation intensity is 2.5 μW/cm2 , the DC performance of the FET does not change significantly with irradiation time (its performances at irradiation times of 5 and 20 min are almost the same); in particular, the Idss of NW FET only reduces by about 50 nA. Research is underway to reveal the intrinsic properties of suspended ZnO nanowires and to explore their device applications.

Key words: ZnO nanowire, suspended, field-effect transistor, ultraviolet radiation

中图分类号:  (Field effect devices)

  • 85.30.Tv
61.80.Ba (Ultraviolet, visible, and infrared radiation effects (including laser radiation)) 81.07.Vb (Quantum wires) 85.35.Be (Quantum well devices (quantum dots, quantum wires, etc.)) 73.63.Nm (Quantum wires) 85.30.De (Semiconductor-device characterization, design, and modeling)