Effects of electron radiation on shielded space and triple-junction GaAs solar cells

doi:10.1088/1674-1056/18/11/066

中国物理B ›› 2009, Vol. 18 ›› Issue (11): 5015-5019.doi: 10.1088/1674-1056/18/11/066

Effects of electron radiation on shielded space and triple-junction GaAs solar cells

高欣, 杨生胜, 薛玉雄, 李凯, 李丹明, 王鹢, 王云飞, 冯展祖

National Key Laboratory of Vacuum & Cryogenics Technology and Physics, Lanzhou Institute of Physics, Chinese Academy of Space Technology, Lanzhou 730000, China

收稿日期:2008-08-20 修回日期:2009-05-26 出版日期:2009-11-20 发布日期:2009-11-20
基金资助:
Project supported by the National Key Laboratory for Vacuum \& Cryogenics Technology and Physics Foundation of China (Grant No 9140C5503060802) and the National High Technology Development Program of China (Grant No 2007AA042431).

Effects of electron radiation on shielded space and triple-junction GaAs solar cells

Gao Xin(高欣)^†, Yang Sheng-Sheng(杨生胜), Xue Yu-Xiong(薛玉雄), Li Kai(李凯), Li Dan-Ming(李丹明), Wang Yi(王鹢), Wang Yun-Fei(王云飞), and Feng Zhan-Zu(冯展祖)

National Key Laboratory of Vacuum & Cryogenics Technology and Physics, Lanzhou Institute of Physics, Chinese Academy of Space Technology, Lanzhou 730000, China

Received:2008-08-20 Revised:2009-05-26 Online:2009-11-20 Published:2009-11-20
Supported by:
Project supported by the National Key Laboratory for Vacuum \& Cryogenics Technology and Physics Foundation of China (Grant No 9140C5503060802) and the National High Technology Development Program of China (Grant No 2007AA042431).

摘要/Abstract

摘要： The displacement damage dose methodology for analysing and modelling the performance of triple-junction InGaP₂/GaAs/Ge solar cells in an electron radiation environment is presented. Degradations at different electron energies are correlated with displacement damage dose (D_\rm d). One particular electron radiation environment, relative to a geosynchronous earth orbit (GEO), is chosen to calculate the total D_\rm d behind the different thicknesses coverglasses to predict the performance degradation at the end of the 15-year mission.

关键词: nonionizing energy loss, displacement damage dose, solar cell

Abstract: The displacement damage dose methodology for analysing and modelling the performance of triple-junction InGaP₂/GaAs/Ge solar cells in an electron radiation environment is presented. Degradations at different electron energies are correlated with displacement damage dose (D_d). One particular electron radiation environment, relative to a geosynchronous earth orbit (GEO), is chosen to calculate the total D_d behind the different thicknesses coverglasses to predict the performance degradation at the end of the 15-year mission.

Key words: nonionizing energy loss, displacement damage dose, solar cell

中图分类号: (Photoelectric conversion)

84.60.Jt

85.30.De (Semiconductor-device characterization, design, and modeling) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 61.80.Fe (Electron and positron radiation effects)

高欣, 杨生胜, 薛玉雄, 李凯, 李丹明, 王鹢, 王云飞, 冯展祖. Effects of electron radiation on shielded space and triple-junction GaAs solar cells[J]. 中国物理B, 2009, 18(11): 5015-5019.

Gao Xin(高欣), Yang Sheng-Sheng(杨生胜), Xue Yu-Xiong(薛玉雄), Li Kai(李凯), Li Dan-Ming(李丹明), Wang Yi(王鹢), Wang Yun-Fei(王云飞), and Feng Zhan-Zu(冯展祖). Effects of electron radiation on shielded space and triple-junction GaAs solar cells[J]. Chin. Phys. B, 2009, 18(11): 5015-5019.

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Effects of electron radiation on shielded space and triple-junction GaAs solar cells

Effects of electron radiation on shielded space and triple-junction GaAs solar cells

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