中国物理B ›› 2007, Vol. 16 ›› Issue (7): 2082-2086.doi: 10.1088/1009-1963/16/7/046

• CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES • 上一篇    下一篇

Properties of GaN on different polarity buffer layers by hydride vapour phase epitaxy

邱凯, 钟飞, 李新化, 尹志军, 姬长建, 韩奇峰, 陈家荣, 曹先存, 王玉琦   

  1. Key Laboratory of Materials Physics, Institute of Solid State Physics,Chinese Academy of Sciences, Heifei 230031, China
  • 收稿日期:2006-11-23 修回日期:2006-12-26 出版日期:2007-07-04 发布日期:2007-07-04
  • 基金资助:
    Project supported by the National Natural Science Foundation of China (Grant No 10574130).

Properties of GaN on different polarity buffer layers by hydride vapour phase epitaxy

Qiu Kai(邱凯)†,Zhong Fei(钟飞), Li Xin-Hua(李新化), Yin Zhi-Jun(尹志军), Ji Chang-Jian(姬长建), Han Qi-Feng(韩奇峰), Chen Jia-Rong(陈家荣), Cao Xian-Cun(曹先存), and Wang Yu-Qi(王玉琦)   

  1. Key Laboratory of Materials Physics, Institute of Solid State Physics,Chinese Academy of Sciences, Heifei 230031, China
  • Received:2006-11-23 Revised:2006-12-26 Online:2007-07-04 Published:2007-07-04
  • Supported by:
    Project supported by the National Natural Science Foundation of China (Grant No 10574130).

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摘要： This paper reports on N-, mixed-, and Ga-polarity buffer layers are grown by molecular beam epitaxy (MBE) on sapphire (0001) substrates, with the GaN thicker films grown on the buffer layer with different polarity by hydride vapour epitaxy technique (HVPE). The surface morphology, structural and optical properties of these HVPE-GaN epilayers are characterized by wet chemical etching, scanning electron microscope, x-ray diffraction, and photoluminescence spectrum respectively. It finds that the N-polarity film is unstable against the higher growth temperature and wet chemical etching, while that of GaN polarity one is stable. The results indicate that the crystalline quality of HVPE-GaN epilayers depends on the polarity of buffer layers.

Abstract: This paper reports on N-, mixed-, and Ga-polarity buffer layers are grown by molecular beam epitaxy (MBE) on sapphire (0001) substrates, with the GaN thicker films grown on the buffer layer with different polarity by hydride vapour epitaxy technique (HVPE). The surface morphology, structural and optical properties of these HVPE-GaN epilayers are characterized by wet chemical etching, scanning electron microscope, x-ray diffraction, and photoluminescence spectrum respectively. It finds that the N-polarity film is unstable against the higher growth temperature and wet chemical etching, while that of GaN polarity one is stable. The results indicate that the crystalline quality of HVPE-GaN epilayers depends on the polarity of buffer layers.

Key words: GaN, HVPE, MBE, polarity

中图分类号:  (Thin film structure and morphology)

  • 68.55.-a
68.55.A- (Nucleation and growth) 78.55.Cr (III-V semiconductors) 78.66.Fd (III-V semiconductors) 81.15.Hi (Molecular, atomic, ion, and chemical beam epitaxy) 81.65.Cf (Surface cleaning, etching, patterning)