中国物理B ›› 2007, Vol. 16 ›› Issue (6): 1796-1805.doi: 10.1088/1009-1963/16/6/054

• 8000 CROSSDISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY • 上一篇    下一篇

Yield estimation of metallic layers in integrated circuits

王俊平, 郝跃, 张俊明   

  1. Microelectronics Institute, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • 收稿日期:2006-08-08 修回日期:2007-01-09 出版日期:2007-06-20 发布日期:2007-06-20
  • 基金资助:
    Project supported by Xi'an Applied Materials Innovation Fund (Grant No XA-AM-200601) and National Laboratory on Machine Perception of Peking University Fund (Grant No 0604).

Yield estimation of metallic layers in integrated circuits

Wang Jun-Ping(王俊平)†, Hao Yue(郝跃), and Zhang Jun-Ming(张俊明)   

  1. Microelectronics Institute, Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xidian University, Xi'an 710071, China
  • Received:2006-08-08 Revised:2007-01-09 Online:2007-06-20 Published:2007-06-20
  • Supported by:
    Project supported by Xi'an Applied Materials Innovation Fund (Grant No XA-AM-200601) and National Laboratory on Machine Perception of Peking University Fund (Grant No 0604).

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摘要： In the existing models of estimating the yield and critical area, the defect outline is usually assumed to be circular, but the observed real defect outlines are irregular in shape. In this paper, estimation of the yield and critical area is made using the Monte Carlo technique and the relationship between the errors of yield estimated by circular defect and the rectangle degree of the defect is analysed. The rectangular model of a real defect is presented, and the yield model is provided correspondingly. The models take into account an outline similar to that of an original defect, the characteristics of two-dimensional distribution of defects, the feature of a layout routing, and the character of yield estimation. In order to make the models practicable, the critical area computations related to rectangular defect and regular (vertical or horizontal) routing are discussed. The critical areas associated with rectangular defect and non-regular routing are developed also, based on the mathematical morphology. The experimental results show that the new yield model may predict the yield caused by real defects more accurately than the circular model. It is significant that the yield is accurately estimated using the proposed model for IC metals.

Abstract: In the existing models of estimating the yield and critical area, the defect outline is usually assumed to be circular, but the observed real defect outlines are irregular in shape. In this paper, estimation of the yield and critical area is made using the Monte Carlo technique and the relationship between the errors of yield estimated by circular defect and the rectangle degree of the defect is analysed. The rectangular model of a real defect is presented, and the yield model is provided correspondingly. The models take into account an outline similar to that of an original defect, the characteristics of two-dimensional distribution of defects, the feature of a layout routing, and the character of yield estimation. In order to make the models practicable, the critical area computations related to rectangular defect and regular (vertical or horizontal) routing are discussed. The critical areas associated with rectangular defect and non-regular routing are developed also, based on the mathematical morphology. The experimental results show that the new yield model may predict the yield caused by real defects more accurately than the circular model. It is significant that the yield is accurately estimated using the proposed model for IC metals.

Key words: real defects, critical area model, mathematical morphology, yield estimation

中图分类号:  (Computer-aided design of microcircuits; layout and modeling)

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